Influence of the Structural and Compositional Properties of PECVD Silicon Nitride as a Passivation Layer for AlGaN HEMTs by Karouta, Fouad, Krämer, Mark, Kwaspen, J J., Grzegorczyk, Andrzej, Hageman, Paul, Hoex, Bram, Kessels, W. M., Klootwijk, Johan, Timmering, Eugène, Smit, Meint

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11.9 W Output Power at S-band from 1 mm AlGaN/GaN HEMTs by Krämer, Mark, Karouta, Fouad, Kwaspen, J J., Rudzinski, Marius, Larsen, Poul K., Suiker, Erwin M., De Hek, Peter A., Rödle, Thomas, Volokhine, Iouri, Kaufmann, Leon M.

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Influence of scattering on the I-V characteristics of double-barrier resonant-tunneling diodes by van de Roer, T.G., Kwaspen, J.J.M., Joosten, H., Noteborn, H., Lenstra, D., Henini, M.

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Microwave noise behaviour of resonant tunnelling diodes by Kwaspen, J.J.M., Heyker, H.C., van de Roer, Th.G.

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Automatic display of electron density in a plasma column by Roer, Th G van de, Kwaspen, J J M

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PIN-PJBT Integration: A New GaAs Based Optoelectronic Receiver by Dillmann, F., Kwaspen, J.M.M., Marso, M., Hardtdegen, M., Kaufmann, L.M.F., Kordos, P., Luth, H., Brennemann, A., Tegude, F.J.

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Hot Electron Injection Laser Controlled Carrier-Heating Induced Gain Switching by Hoskens, R.C.P., van de Roer, T.G., Smalbrugge, E., Kwaspen, J.J.M., Tolstikhin, V.I., Tan, H.H., Jagadish, C., Acket, G.A.

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A new concept for a monolithically integrated optoelectronic receiver based on a GaAs-PIN-photodiode and a PJBT by Dillmann, F., Brennemann, P., Hardtdegen, H., Marso, M., Loken, M., Kordos, P., Luth, H., Tegude, F.J., Kwaspen, J.M.M., Kaufmann, L.M.F.

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Accurate Modeling of Double Barrier Resonant Tunneling Diodes by van de Roer, T., Hendriks, M., Magnus, W., Henini, M., Heyker, H., Kwaspen, M., van der Vleuten, W., Caro, J., Lukey, P.

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