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    1.2 kV SiC MOSFETs with tapered buffer oxide for the suppression of the electric field crowding effect

    1.2 kV SiC MOSFETs with tapered buffer oxide for the suppression of the electric field crowding effect by Yoon, Hyowon, Kim, Jinhun, Kim, Sangyeob, Kim, Chaeyun, Park, Yeongeun, Kwon, Soontak, Song, Jaejin, Lee, Jeongyun, Ha, Min-Woo, Seok, Ogyun

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