Impact of Double-Suction Pump Eye Diameter Variation on Cavitation Phenomena by Oh, Kyungseok, Kim, Junho

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Experimental and numerical investigation on the dent resistance of a dual phase steel originated from the yield-point phenomenon by Kim, Jaehyun, Lee, Hongwoo, Oh, Kyungseok, Seok, Dong-Yoon, Park, Sungsoo, Kang, Yeonsik, Kim, Do-Nyun

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WaveVC: Speech and Fundamental Frequency Consistent Raw Audio Voice Conversion by Ko, Kyungdeuk, Kim, Donghyeon, Oh, Kyungseok, Ko, Hanseok

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A 31 ns Random Cycle VCAT-Based 4F ^ DRAM With Manufacturability and Enhanced Cell Efficiency by Song, Ki-Whan, Kim, Jin-Young, Yoon, Jae-Man, Kim, Sua, Kim, Huijung, Chung, Hyun-Woo, Kim, Hyungi, Kim, Kanguk, Park, Hwan-Wook, Kang, Hyun Chul, Tak, Nam-Kyun, Park, Dukha, Kim, Woo-Seop, Lee, Yeong-Taek, Oh, Yong Chul, Jin, Gyo-Young, Yoo, Jeihwan, Park, Donggun, Oh, Kyungseok, Kim, Changhyun, Jun, Young-Hyun

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A 1.2V 30nm 1.6Gb/s/pin 4Gb LPDDR3 SDRAM with input skew calibration and enhanced control scheme by Yong-Cheol Bae, Joon-Young Park, Sang Jae Rhee, Seung Bum Ko, Yonggwon Jeong, Kwang-Sook Noh, Younghoon Son, Jaeyoun Youn, Yonggyu Chu, Hyunyoon Cho, Mijo Kim, Daesik Yim, Hyo-Chang Kim, Sang-Hoon Jung, Hye-In Choi, Sungmin Yim, Jung-Bae Lee, Joo Sun Choi, Kyungseok Oh

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A novel method to analyze and design a NWL scheme DRAM by Seokhan Park, Bonggu Sung, Hyuckchai Jung, Junhee Lim, Sangwoon Lee, Jooyoung Lee, Wonsuk Yang, Kyungseok Oh, Taeyoung Chung, Kinam Kim

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Twin silicon nanowire FET (TSNWFET) On SOI with 8 nm silicon nanowires and 25 nm surrounding TiN gate by Dong-Won Kim, Ming Li, Kyoung Hwan Yeo, Yun Young Yeoh, Sung Dae Suk, Keun Hwi Cho, Kyungseok Oh, Won-Seong Lee

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Evaluation of Ultra Thin Body Si-On-ONO (UTB SOONO) transistors using ultra thin spacer technology by Hyun Jun Bae, Sung Hwan Kim, Sung In Hong, Yong Lack Choi, Ho Ju Song, Chang Woo Oh, Dong-Won Kim, Donggun Park, KyungSeok Oh, Won-Seong Lee

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55 nm capacitor-less 1T DRAM cell transistor with non-overlap structure by Ki-Whan Song, Hoon Jeong, Jae-Wook Lee, Sung In Hong, Nam-Kyun Tak, Young-Tae Kim, Yong Lack Choi, Han Sung Joo, Sung Hwan Kim, Ho Ju Song, Yong Chul Oh, Woo-Seop Kim, Yeong-Taek Lee, Kyungseok Oh, Changhyun Kim

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A 31 ns Random Cycle VCAT-Based 4F 2 DRAM With Manufacturability and Enhanced Cell Efficiency by Song, Ki-Whan, Kim, Jin-Young, Yoon, Jae-Man, Kim, Sua, Kim, Huijung, Chung, Hyun-Woo, Kim, Hyungi, Kim, Kanguk, Park, Hwan-Wook, Kang, Hyun Chul, Tak, Nam-Kyun, Park, Dukha, Kim, Woo-Seop, Lee, Yeong-Taek, Oh, Yong Chul, Jin, Gyo-Young, Yoo, Jeihwan, Park, Donggun, Oh, Kyungseok, Kim, Changhyun, Jun, Young-Hyun

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Novel stress-memorization-technology (SMT) for high electron mobility enhancement of gate last high-k/metal gate devices by Kwan-Yong Lim, Hyunjung Lee, Choongryul Ryu, Kang-Ill Seo, Uihui Kwon, Seokhoon Kim, Jongwan Choi, Kyungseok Oh, Hee-Kyung Jeon, Chulgi Song, Tae-Ouk Kwon, Jinyeong Cho, Seunghun Lee, Yangsoo Sohn, Hong Sik Yoon, Junghyun Park, Kwanheum Lee, Wookje Kim, Eunha Lee, Sang-Pil Sim, Chung Geun Koh, Sang Bom Kang, Siyoung Choi, Chilhee Chung

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First demonstration of 3-dimensional stacked FET with top/bottom source-drain isolation and stacked n/p metal gate by Park, Jaehyun, Kim, Wukang, Park, Sungil, Yun, Jinchan, Hwang, Kyuman, Yang, Jinwook, Kim, Dahye, Jeong, Jae Won, Yun, Chuljin, Bae, Jinho, Park, Jejune, Park, Sam, Huh, Woong, Huh, Daihong, Yang, Suk, Lee, Junghan, Seo, Jaehoon, Kim, Ajeong, Oh, Kyungseok, Yoo, Donggon, Kuh, Bong Jin, Ha, Daewon, Shin, Yu Gyun, Song, Jaihyuk

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SLEB: Streamlining LLMs through Redundancy Verification and Elimination of Transformer Blocks by Song, Jiwon, Oh, Kyungseok, Kim, Taesu, Kim, Hyungjun, Kim, Yulhwa, Jae-Joon, Kim

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Misalignment Study by Etch Induced Silicon Damage in Single Crystal Etch Process for Shallow Trench Isolation Structure by Lee, Jung-Chan, Lee, Seung-Jae, Kim, Mun-Jun, Lee, Seung-Heon Lee, Oh, Kyungseok, Lee, Jun-Hee, Kang, Man-Sug, Nam, Seok-Woo, Roh, Yonghan

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Random Telegraph Noise in n-type and p-type silicon nanowire transistors by Seungwon Yang, Kyoung Hwan Yeo, Dong-Won Kim, Kang-ill Seo, Donggun Park, Gyoyoung Jin, KyungSeok Oh, Hyungcheol Shin

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Flicker noise in N-type and P-type silicon nanowire transistors by Seungwon Yang, Younghwan Son, Sung Dae Suk, Dong-Won Kim, Donggun Park, Kyungseok Oh, Hyungcheol Shin

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Cortical activation patterns of electrical pain stimulation using fNIRS by Han, Inhwa, Won, Sanghyun, Kang, Yungeui, Oh, Kyungseok, Kim, Kyeonghui, Jekal, Janghwan, Jin, Sang Hyeon, Lee, Gi Hyun, Yang, Seung Tae, Jung, Seon Yoon, An, Jinung

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Synthesis and Mesomorphic Properties of Poly(oxyethylene) with [(6-Heptylsulfonyl)hexylthio]methyl Side Groups by Lee , Jong-Chan, Oh, Kyungseok, Lee, Hee Bong, Kim, Young Gyu, Jho, Jae Young, Kwak, Seung-Yeop, Park, Soo-Young, Farmer, Barry L.

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Thin oxide degradation from HDP-CVD oxide deposition in 300mm process by Si-Woo Lee, Changmoon Ahn, Byounghoon Kim, Seunghyun Chang, Dong-Hyun Han, Chiyong An, Jaihyung Won, Jaeyoung Kim, Seungwook Jung, Dongho-Shin, Kyungseok Oh, Won-Seong Lee, Donggun Park

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A 31 ns Random Cycle VCAT-Based 4F2 DRAM With Manufacturability and Enhanced Cell Efficiency by SONG, Ki-Whan, KIM, Jin-Young, TAK, Nam-Kyun, PARK, Dukha, KIM, Woo-Seop, LEE, Yeong-Taek, YONG CHUL OH, JIN, Gyo-Young, YOO, Jeihwan, PARK, Donggun, OH, Kyungseok, KIM, Changhyun, YOON, Jae-Man, JUN, Young-Hyun, KIM, Sua, KIM, Huijung, CHUNG, Hyun-Woo, KIM, Hyungi, KIM, Kanguk, PARK, Hwan-Wook, HYUN CHUL KANG

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