Search Results - LEE, Hyeung-Ho

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    Characteristics of ALD HfSiOx using new Si precursors for gate dielectric applications

    Characteristics of ALD HfSiOx using new Si precursors for gate dielectric applications by KIM, Yun-Seok, HA JIN LIM, CHUNG, Youngsu, HAE YOUNG KIM, NAM KYU LEE, RAMANATHAN, Sasangan, SEIDEL, Tom, BOLESLAWSKI, Marek, IRVINE, Geoff, KIM, Byung-Ki, LEE, Hyeung-Ho, KANG, Ho-Kyu, JUNG, Hyung-Suk, LEE, Jong-Ho, PARK, Jae-Eun, SUNG KEE HAN, JUNG HYOUNG LEE, DOH, Seok-Joo, JONG PYO KIM, NAE IN LEE

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    Characteristics of ALD HfSiO/sub x/ using new Si precursors for gate dielectric applications

    Characteristics of ALD HfSiO/sub x/ using new Si precursors for gate dielectric applications by Yun-Seok Kim, Ha Jin Lim, Hyung-Suk Jung, Jong-Ho Lee, Jae-Eun Park, Sung Kee Han, Jung Hyoung Lee, Seok-Joo Doh, Jong Pyo Kim, Nae In Lee, Ho-Kyu Kang, Youngsu Chung, Hae Young Kim, Nam Kyu Lee, Ramanathan, S., Seidel, T., Boleslawski, M., Irvine, G., Byung-Ki Kim, Hyeung-Ho Lee

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