Search Results - LOURAL, M. S. S

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  1. 1
    Impurity-induced disorder in strained InGaAs/GaAs quantum wells by Zn diffusion and thermal annealing

    Impurity-induced disorder in strained InGaAs/GaAs quantum wells by Zn diffusion and thermal annealing by Furtado, M T, Loural, M S S, Sato, E A, Sacilotti, M A

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  2. 2
    Low-threshold GaInAsSb/GaAlAsSb double-heterostructure lasers grown by LPE

    Low-threshold GaInAsSb/GaAlAsSb double-heterostructure lasers grown by LPE by Morosini, M.B.Z., Herrera-Perez, J.L., Loural, M.S.S., Von Zuben, A.A.G., da Silveira, A.C.F., Patel, N.B.

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  3. 3
    Measurement of conduction band offsets in Ga0.94Al0.06As:Ga0.57Al0.43As heterojunctions by electrochemical C-V profiling

    Measurement of conduction band offsets in Ga0.94Al0.06As:Ga0.57Al0.43As heterojunctions by electrochemical C-V profiling by FURTADO, M. T, LOURAL, M. S. S, SACHS, A. C

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  4. 4
    Low-thresold GaInAsSb/GaAsSb double-heterostructure lasers grown by LPE

    Low-thresold GaInAsSb/GaAsSb double-heterostructure lasers grown by LPE by MOROSINI, M. B. Z, HERRERA-PEREZ, J. L, LOURAL, M. S. S, VON ZUBEN, A. A. G, DA SILVEIRA, A. C. F, PATEL, N. B

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  5. 5
    Direct evaluation of interdiffusion coefficients in quantum well heterostructures using photoluminescence

    Direct evaluation of interdiffusion coefficients in quantum well heterostructures using photoluminescence by Furtado, M.T., Loural, M.S.S.

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  6. 6
    Band offset in GaAlAs and InGaAs: InP Preterojunctions by electrochemical CV profiling

    Band offset in GaAlAs and InGaAs: InP Preterojunctions by electrochemical CV profiling by FURTADO, M. T, LOURAL, M. S. S, SACHS, A. C, SHIEH, P. J

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  7. 7
    Band offset in GaAlAs and InGaAs: InP heterojunctions by electrochemical CV profiling

    Band offset in GaAlAs and InGaAs: InP heterojunctions by electrochemical CV profiling by Furtado, M.T., Loural, M.S.S., Sachs, A.C., Shieh, P.J.

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