Search Results - LOURIS, P. J

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  1. 1
    Chemical etch rate of plasma-enhanced chemical vapor deposited SiO2 films : Effect of deposition parameters

    Chemical etch rate of plasma-enhanced chemical vapor deposited SiO2 films : Effect of deposition parameters by BESSER, R. S, LOURIS, P. J, MUSKET, R. G

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  2. 2
    Structural basis for inhibition of TLR2 by staphylococcal superantigen-like protein 3 (SSL3)

    Structural basis for inhibition of TLR2 by staphylococcal superantigen-like protein 3 (SSL3) by Koymans, Kirsten J., Feitsma, Louris J., Brondijk, T. Harma C., Aerts, Piet C., Lukkien, Eddie, Lössl, Philip, vanKessel, Kok P. M., de Haas, Carla J. C., van Strijp, Jos A. G., Huizinga, Eric G.

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    Instrumentation, applications, and energy deposition in quadrupole ion-trap tandem mass spectrometry

    Instrumentation, applications, and energy deposition in quadrupole ion-trap tandem mass spectrometry by Louris, John N, Cooks, R. Graham, Syka, John E. P, Kelley, Paul E, Stafford, George C, Todd, John F. J

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