Search Results - Lafond, Jean-Luc V

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  1. 1
    Bromide Intoxication and Pseudohyperchloremia

    Bromide Intoxication and Pseudohyperchloremia by Danel, Vincent C, Saviuc, Philippe F, Hardy, Gaëlle A, Lafond, Jean-Luc V, Mallaret, Michel P

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  2. 2
    Comparative genomics of protoploid Saccharomycetaceae

    Comparative genomics of protoploid Saccharomycetaceae by Souciet, Jean-Luc, Dujon, Bernard, Gaillardin, Claude, Johnston, Mark, Baret, Philippe V, Cliften, Paul, Sherman, David J, Weissenbach, Jean, Westhof, Eric, Wincker, Patrick, Jubin, Claire, Poulain, Julie, Barbe, Valérie, Ségurens, Béatrice, Artiguenave, François, Anthouard, Véronique, Vacherie, Benoit, Val, Marie-Eve, Fulton, Robert S, Minx, Patrick, Wilson, Richard, Durrens, Pascal, Jean, Géraldine, Marck, Christian, Martin, Tiphaine, Nikolski, Macha, Rolland, Thomas, Seret, Marie-Line, Casarégola, Serge, Despons, Laurence, Fairhead, Cécile, Fischer, Gilles, Lafontaine, Ingrid, Leh, Véronique, Lemaire, Marc, de Montigny, Jacky, Neuvéglise, Cécile, Thierry, Agnès, Blanc-Lenfle, Isabelle, Bleykasten, Claudine, Diffels, Julie, Fritsch, Emilie, Frangeul, Lionel, Goëffon, Adrien, Jauniaux, Nicolas, Kachouri-Lafond, Rym, Payen, Célia, Potier, Serge, Pribylova, Lenka, Ozanne, Christophe, Richard, Guy-Franck, Sacerdot, Christine, Straub, Marie-Laure, Talla, Emmanuel

    Published in Genome Research
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  3. 3
    Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO2 gate stack

    Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO2 gate stack by Barral, V., Poiroux, T., Andrieu, F., Buj-Dufournet, C., Faynot, O., Ernst, T., Brevard, L., Fenouillet-Beranger, C., Lafond, D., Hartmann, J.M., Vidal, V., Allain, F., Daval, N., Cayrefourcq, I., Tosti, L., Munteanu, D., Autran, J.L., Deleonibus, S.

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  4. 4
    Electron mean-free-path experimental extraction on ultra-thin and ultra-short strained and unstrained FDSOI n-MOSFETs

    Electron mean-free-path experimental extraction on ultra-thin and ultra-short strained and unstrained FDSOI n-MOSFETs by Barral, V., Poiroux, T., Barraud, S., Bonno, O., Andrieu, F., Buj-Dufournet, C., Brevard, L., Lafond, D., Faynot, O., Munteanu, D., Autran, J.L., Deleonibus, S.

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