Dislocation dynamics in relaxed graded composition semiconductors by Fitzgerald, E.A, Kim, A.Y, Currie, M.T, Langdo, T.A, Taraschi, G, Bulsara, M.T

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Strained Si on insulator technology: from materials to devices by Langdo, T.A, Currie, M.T, Cheng, Z.-Y, Fiorenza, J.G, Erdtmann, M, Braithwaite, G, Leitz, C.W, Vineis, C.J, Carlin, J.A, Lochtefeld, A, Bulsara, M.T, Lauer, I, Antoniadis, D.A, Somerville, M

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Fully depleted n-MOSFETs on supercritical thickness strained SOI by Lauer, I., Langdo, T.A., Cheng, Z.-Y., Fiorenza, J.G., Braithwaite, G., Currie, M.T., Leitz, C.W., Lochtefeld, A., Badawi, H., Bulsara, M.T., Somerville, M., Antoniadis, D.A.

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High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates by Sieg, R. M., Carlin, J. A., Boeckl, J. J., Ringel, S. A., Currie, M. T., Ting, S. M., Langdo, T. A., Taraschi, G., Fitzgerald, E. A., Keyes, B. M.

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Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates by Leitz, C.W., Vineis, C.J., Carlin, J., Fiorenza, J., Braithwaite, G., Westhoff, R., Yang, V., Carroll, M., Langdo, T.A., Matthews, K., Kohli, P., Rodder, M., Wise, R., Lochtefeld, A.

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Transport and leakage in super-critical thickness strained silicon directly on insulator MOSFETs with strained Si thickness up to 135 nm by Aberg, I., Cheng, Z., Langdo, T.A., Lauer, I., Lochtefeld, A., Antoniadis, D.A., Hoyt, J.L.

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SiGe-On-Insulator (SGOI): substrate preparation and MOSFET fabrication for electron mobility evaluation by Zhi-Yuan Cheng, Currie, M.T., Leitz, C.W., Taraschi, G., Pitera, A., Lee, M.L., Langdo, T.A., Hoyt, J.L., Antoniadis, D.A., Fitzgerald, E.A.

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Dislocation engineering in strained mos materials by Fitzgerald, E.A., Lee, M.L., Yu, B., Lee, K.E., Dohrman, C.L., Isaacson, D., Langdo, T.A., Antoniadis, D.A.

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Impact of threading dislocations on both n/p and p/n single junction GaAs cells grown on Ge/SiGe/Si substrates by Andre, C.L., Khan, A., Gonzalez, M., Hudait, M.K., Fitzgerald, E.A., Carlin, J.A., Currie, M.T., Leitz, C.W., Langdo, T.A., Clark, E.B., Wilt, D.M., Ringel, S.A.

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DC and RF characterization of fully depleted strained SOI MOSFETs by Chen, C.L., Langdo, T.A., Chen, C.K., Fiorenza, J.G., Wyatt, P.W., Currie, M.T., Leitz, C.W., Braithwaite, G., Fritze, M., Lambert, R., Yost, D.-R., Cheng, Z., Lochtefeld, A., Keast, C.K.

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Super self-aligned double-gate (SSDG) MOSFETs utilizing oxidation rate difference and selective epitaxy by Jong-Ho Lee, Taraschi, G., Andy Wei, Langdo, T.A., Fitzgerald, E.A., Antoniadis, D.A.

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