Thermionic Emission as a Tool to Study Transport in Undoped nFinFETs by Tettamanzi, G.C., Paul, A., Lansbergen, G.P., Verduijn, J., Sunhee Lee, Collaert, N., Biesemans, S., Klimeck, G., Rogge, S.

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Sub-threshold study of undoped trigate nFinFET by Tettamanzi, G.C., Lansbergen, G.P., Paul, A., Lee, S., Deosarran, P.A., Collaert, N., Klimeck, G., Biesemans, S., Rogge, S.

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Transport-based dopant metrology in advanced FinFETs by Lansbergen, G.P., Rahman, R., Wellard, C.J., Caro, J., Collaert, N., Biesemans, S., Klimeck, G., Hollenberg, L.C.L., Rogge, S.

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Sample variability and time stability in scaled silicon nanowires by Pierre, M., Jehl, X., Wacquez, R., Vinet, M., Sanquer, M., Belli, M., Prati, E., Fanciulli, M., Verduijn, J., Tettamanzi, G.C., Lansbergen, G.P., Rogge, S., Ruoff, M., Fleischer, M., Wharam, D., Kern, D.

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Determination of the eigenstates and wavefunctions of a single gated As donor by Lansbergen, G.P., Rahman, R., Wellard, C.J., Rutten, P.E., Caro, J., Woo, I., Colleart, N., Biesemans, S., Klimeck, G., Hollenberg, L.C.L., Rogge, S.

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Single-dopant spectroscopy and sub-threshold channels at the corners of triple-gate FinFETs by Lansbergen, G.P., Sellier, H., Collaert, N., Ferain, I., Jurczak, M., Biesemans, S., Caro, J., Rogge, S.

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