Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes by Reich, Christoph, Guttmann, Martin, Feneberg, Martin, Wernicke, Tim, Mehnke, Frank, Kuhn, Christian, Rass, Jens, Lapeyrade, Mickael, Einfeldt, Sven, Knauer, Arne, Kueller, Viola, Weyers, Markus, Goldhahn, Rüdiger, Kneissl, Michael

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Highly conductive n-AlxGa1−xN layers with aluminum mole fractions above 80 by Mehnke Frank, Wernicke, Tim, Pingel Harald, Kuhn, Christian, Reich, Christoph, Kueller Viola, Knauer Arne, Lapeyrade Mickael, Weyers, Markus

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Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature by Glaab, Johannes, Ploch, Christian, Kelz, Rico, Stölmacker, Christoph, Lapeyrade, Mickael, Ploch, Neysha Lobo, Rass, Jens, Kolbe, Tim, Einfeldt, Sven, Mehnke, Frank, Kuhn, Christian, Wernicke, Tim, Weyers, Markus, Kneissl, Michael

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Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N by Lapeyrade, Mickael, Alamé, Sabine, Glaab, Johannes, Mogilatenko, Anna, Unger, Ralph-Stephan, Kuhn, Christian, Wernicke, Tim, Vogt, Patrick, Knauer, Arne, Zeimer, Ute, Einfeldt, Sven, Weyers, Markus, Kneissl, Michael

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Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes by Mehnke, Frank, Kuhn, Christian, Guttmann, Martin, Reich, Christoph, Kolbe, Tim, Kueller, Viola, Knauer, Arne, Lapeyrade, Mickael, Einfeldt, Sven, Rass, Jens, Wernicke, Tim, Weyers, Markus, Kneissl, Michael

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Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces by Lapeyrade, Mickael, Muhin, Anton, Einfeldt, Sven, Zeimer, Ute, Mogilatenko, Anna, Weyers, Markus, Kneissl, Michael

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Degradation behavior of AlGaN-based 233 nm deep-ultraviolet light emitting diodes by Glaab, Johannes, Ruschel, Jan, Mehnke, Frank, Lapeyrade, Mickael, Guttmann, Martin, Wernicke, Tim, Weyers, Markus, Einfeldt, Sven, Kneissl, Michael

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Gas Sensing of Nitrogen Oxide Utilizing Spectrally Pure Deep UV LEDs by Mehnke, Frank, Guttmann, Martin, Enslin, Johannes, Kuhn, Christian, Reich, Christoph, Jordan, Jakob, Kapanke, Simon, Knauer, Arne, Lapeyrade, Mickael, Zeimer, Ute, Kruger, Hendrik, Rabe, Marian, Einfeldt, Sven, Wernicke, Tim, Ewald, Hartmut, Weyers, Markus, Kneissl, Michael

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Design considerations for AlGaN-based UV LEDs emitting near 235 nm with uniform emission pattern by Lapeyrade, Mickael, Glaab, Johannes, Knauer, Arne, Kuhn, Christian, Enslin, Johannes, Reich, Christoph, Guttmann, Martin, Mehnke, Frank, Wernicke, Tim, Einfeldt, Sven, Weyers, Markus, Kneissl, Michael

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Highly conductive n-Al x Ga1− x N layers with aluminum mole fractions above 80 by Mehnke, Frank, Wernicke, Tim, Pingel, Harald, Kuhn, Christian, Reich, Christoph, Kueller, Viola, Knauer, Arne, Lapeyrade, Mickael, Weyers, Markus, Kneissl, Michael

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Interpretation of stress variation in silicon nitride films deposited by electron cyclotron resonance plasma by Besland, M. P., Lapeyrade, M., Delmotte, F., Hollinger, G.

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