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Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth
by
Voronenkov, Vladislav
,
Bochkareva, Natalia
,
Zubrilov, Andrey
,
Lelikov, Yuri
,
Gorbunov, Ruslan
,
Latyshev, Philipp
,
Shreter, Yuri
Published in
Physica status solidi. A, Applications and materials science
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Laser slicing: A thin film lift-off method for GaN-on-GaN technology
by
Voronenkov, Vladislav
,
Bochkareva, Natalia
,
Gorbunov, Ruslan
,
Zubrilov, Andrey
,
Kogotkov, Viktor
,
Latyshev, Philipp
,
Lelikov, Yuri
,
Leonidov, Andrey
,
Shreter, Yuri
Published in
Results in physics
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Nature of V-Shaped Defects in GaN
by
Voronenkov, Vladislav
,
Bochkareva, Natalia
,
Gorbunov, Ruslan
,
Latyshev, Philipp
,
Lelikov, Yuri
,
Rebane, Yury
,
Tsyuk, Alexander
,
Zubrilov, Andrey
,
Shreter, Yuri
Published in
Japanese Journal of Applied Physics
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Hydride Vapor-Phase Epitaxy Reactor for Bulk GaN Growth
by
Voronenkov, Vladislav
,
Bochkareva, Natalia
,
Zubrilov, Andrey
,
Lelikov, Yuri
,
Gorbunov, Ruslan
,
Latyshev, Philipp
,
Shreter, Yuri
Published in
arXiv.org
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Laser slicing: a thin film lift-off method for GaN-on-GaN technology
by
Voronenkov, Vladislav
,
Bochkareva, Natalia
,
Gorbunov, Ruslan
,
Zubrilov, Andrey
,
Kogotkov, Viktor
,
Latyshev, Philipp
,
Lelikov, Yuri
,
Leonidov, Andrey
,
Shreter, Yuri
Published in
arXiv.org
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Gallium Nitrides
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Epitaxial Growth
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Flow Resistance
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