Search Results - Lavrent'eva, L.G.

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    Doping and impurity-vacancy complex formation during vapour-phase epitaxy of gallium arsenide

    Doping and impurity-vacancy complex formation during vapour-phase epitaxy of gallium arsenide by Bobrovnikova, I.A., Lavrent'eva, L.G., Rusaikin, M.P., Vilisova, M.D.

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  2. 2
    Formation of centers with deep levels in gaseous phase epitaxy of gallium arsenide

    Formation of centers with deep levels in gaseous phase epitaxy of gallium arsenide by Lavrent'eva, L. G., Vilisova, M. D.

    Published in Soviet Physics Journal
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  3. 3
    Growth and impurity-trapping kinetics in sulfur-doped gallium arsenide epitaxy

    Growth and impurity-trapping kinetics in sulfur-doped gallium arsenide epitaxy by Vilisova, M. D., Lavrent'eva, L. G., Porokhovnichenko, L. P., Chernov, N. A.

    Published in Soviet Physics Journal
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