Search Results - Layman, P.A.

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  1. 1
    MOSFET effective channel length, threshold voltage, and series resistance determination by robust optimization

    MOSFET effective channel length, threshold voltage, and series resistance determination by robust optimization by McAndrew, C.C., Layman, P.A.

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  2. 2
    A compact thermal noise model for the investigation of soft error rates in MOS VLSI digital circuits

    A compact thermal noise model for the investigation of soft error rates in MOS VLSI digital circuits by Layman, P.A., Chamberlain, S.G.

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  3. 3
    Modeling and characterization of MOSFET width dependencies

    Modeling and characterization of MOSFET width dependencies by Ashton, R.A., Layman, P.A., McAndrew, C.C.

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  4. 4
    Accurate characterization of MOSFET overlap/fringing capacitance for circuit design

    Accurate characterization of MOSFET overlap/fringing capacitance for circuit design by McAndrew, C.C., Zaneski, G., Layman, P.A., Ayyar, S.G.

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  5. 5
    A computationally efficient technique to extract diffused profiles and three dimensional collector resistances of high energy implanted bipolar devices

    A computationally efficient technique to extract diffused profiles and three dimensional collector resistances of high energy implanted bipolar devices by Chaudhry, S., Chyan, Y.F., Carroll, M.S., Chen, A.S., Nagy, W.J., Lee, J.L., Layman, P.A., Stevie, F.A., Rafferty, C.S., Vuong, H.H.

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  6. 6
    High performance 3.3 and 5 volt 0.5-/spl mu/m CMOS technologies for ASICs

    High performance 3.3 and 5 volt 0.5-/spl mu/m CMOS technologies for ASICs by Kizilyalli, I.C., Thoma, M.J., Lytle, S.A., Martin, E.P., Vitkavage, S.C., Singh, R., Bechtold, P.F., Kearney, J.W., Rambaud, M., Oates, A., Ryan, V., Layman, P.A., Twiford, M., Cochran, W.T.

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