Low-damage dry-etched grating on an MQW active layer and dislocation-free InP regrowth for 1.55-/spl mu/m complex-coupled DFB lasers fabrication by Talneau, A., Bouadma, N., Lebellego, Y., Slempkes, S., Ougazzaden, A., Patriarche, G., Sermage, B.

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Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine by Ougazzaden, A., Le Bellego, Y., Rao, E. V. K., Juhel, M., Leprince, L., Patriarche, G.

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Low-damage dry-etched grating on an MQW active layer and dislocation-free InP regrowth for 1.55-mum complex-coupled DFB lasers fabrication by Talneau, A, Bouadma, N, Lebellego, Y, Slempkes, S, Ougazzaden, A, Patriarche, G, Sermage, B

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GaAs vertical and lateral growth enhancement using trimethylgallium and trimethylarsenic in selective area metalorganic vapor phase epitaxy on a (111) B substrate by Le Bellégo, Y., Tomioka, S., Kawai, H.

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Low damage dry-etched grating on a MQW active layer and dislocation-free InP regrowth for 1.55 /spl mu/m complex-coupled DFB lasers fabrication by Talneau, A., Bouadma, N., Lebellego, Y., Slempkes, S., Ougazzaden, A., Patriarche, G., Sermage, B.

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UVCVD dielectric films for InP-based optoelectronic devices by Post, G., Le Bellégo, Y., Courant, J.L., Scavennec, A.

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Passivation of GaInAs pin photodiodes by UVCVD SiNx by Le Bellego, Y., Renaud, J.C., Blanconnier, P., Praseuth, J.P.

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Alteration of calcium homeostasis in primary preeclamptic syncytiotrophoblasts: effect on calcium exchange in placenta by Haché, S., Takser, L., LeBellego, F., Weiler, H., Leduc, L., Forest, J. C., Giguère, Y., Masse, A., Barbeau, B., Lafond, J.

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