Search Results - Lee, Eunryeong

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  1. 1
    A 1.1 V 2y-nm 4.35 Gb/s/pin 8 Gb LPDDR4 Mobile Device With Bandwidth Improvement Techniques

    A 1.1 V 2y-nm 4.35 Gb/s/pin 8 Gb LPDDR4 Mobile Device With Bandwidth Improvement Techniques by Song, Keunsoo, Lee, Sangkwon, Kim, Dongkyun, Shim, Youngbo, Park, Sangil, Ko, Bokrim, Hong, Duckhwa, Joo, Yongsuk, Lee, Wooyoung, Cho, Yongdeok, Shin, Wooyeol, Yun, Jaewoong, Lee, Hyengouk, Lee, Jeonghun, Lee, Eunryeong, Jang, Namkyu, Yang, Jaemo, Jung, Hae-kang, Cho, Joohwan, Kim, Hyeongon, Kim, Jinkook

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  2. 2
    A 16Gb 1.2V 3.2Gb/s/pin DDR4 SDRAM with improved power distribution and repair strategy

    A 16Gb 1.2V 3.2Gb/s/pin DDR4 SDRAM with improved power distribution and repair strategy by Seokbo Shim, Sungho Kim, Jooyoung Bae, Keunsik Ko, Eunryeong Lee, Kwidong Kim, Kyeongtae Kim, Sangho Lee, Jinhoon Hyun, Insung Koh, Joonhong Park, Minjeong Kim, Sunhye Shin, Dongha Lee, Yunyoung Lee, Sangah Hyun, Wonjohn Choi, Dain Im, Dongheon Lee, Jieun Jang, Junhyun Chun, Jonghoon Oh, Jinkook Kim, Seok-Hee Lee

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  3. 3
    A 1.1V 2y-nm 4.35Gb/s/pin 8Gb LPDDR4 mobile device with bandwidth improvement techniques

    A 1.1V 2y-nm 4.35Gb/s/pin 8Gb LPDDR4 mobile device with bandwidth improvement techniques by Keunsoo Song, Sangkwon Lee, Dongkyun Kim, Youngbo Shim, Sangil Park, Bokrim Ko, Duckhwa Hong, Yongsuk Joo, Wooyoung Lee, Yongdeok Cho, Wooyeol Shin, Jaewoong Yun, Hyengouk Lee, Jeonghun Lee, Eunryeong Lee, Jaemo Yang, Haekang Jung, Namkyu Jang, Joohwan Cho, Hyeongon Kim, Jinkook Kim

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  4. 4
    23.3 A 4.8Gb/s/pin 2Gb LPDDR4 SDRAM with sub-100µA self-refresh current for IoT applications

    23.3 A 4.8Gb/s/pin 2Gb LPDDR4 SDRAM with sub-100µA self-refresh current for IoT applications by Nohhyup Kwak, Saeng-Hwan Kim, Kyong Ha Lee, Chang-Ki Baek, Mun Seon Jang, Yongsuk Joo, Seung-Hun Lee, Woo Young Lee, Eunryeong Lee, Donghee Han, Jaeyeol Kang, Jung Ho Lim, Jae-Beom Park, Kyung-Tae Kim, Sunki Cho, Sung Woo Han, Jee Yeon Keh, Jun Hyun Chun, Jonghoon Oh, Seok Hee Lee

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  5. 5
    Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states

    Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states by Kim, Donguk, Yang, Tae Jun, Choi, Woo Sik, Lee, Hee Jun, Jang, Jun Tae, Hong, Eunryeong, Yang, Woo Young, Choi, Minwoo, Yang, Ki Yeon, Lee, Chang Seung, Woo, Jiyong, Kim, Dae Hwan

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  6. 6
    Linear Synaptic Weight Update in Selector-Less HfO₂ RRAM Using Al₂O₃ Built-In Resistor for Neuromorphic Computing Systems

    Linear Synaptic Weight Update in Selector-Less HfO₂ RRAM Using Al₂O₃ Built-In Resistor for Neuromorphic Computing Systems by Kim, Yunsur, Kim, Hyejin, Jeon, Seonuk, Kim, Hyun Wook, Hong, Eunryeong, Kim, Nayeon, Choi, Hyeonsik, Park, Hyoungjin, Jeong, Jiae, Lee, Daeseok, Woo, Jiyong

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  7. 7
    Read Disturbances in Cross-Point Phase-Change Memory Arrays-Part I: Physical Modeling With Phase-Change Dynamics

    Read Disturbances in Cross-Point Phase-Change Memory Arrays-Part I: Physical Modeling With Phase-Change Dynamics by Kim, Donguk, Jang, Jun Tae, Kim, Changwook, Kim, Hyun Wook, Hong, Eunryeong, Ban, Sanghyun, Shin, Minchul, Lee, Hanwool, Lee, Hyung Dong, Mo, Hyun-Sun, Woo, Jiyong, Kim, Dae Hwan

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  8. 8
    Read Disturbance in Cross-Point Phase-Change Memory Arrays-Part II: Array Simulations Considering External Currents

    Read Disturbance in Cross-Point Phase-Change Memory Arrays-Part II: Array Simulations Considering External Currents by Kim, Donguk, Jang, Jun Tae, Kim, Changwook, Kim, Hyun Wook, Hong, Eunryeong, Ban, Sanghyun, Shin, Minchul, Lee, Hanwool, Lee, Hyung Dong, Mo, Hyun-Sun, Woo, Jiyong, Kim, Dae Hwan

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