Search Results - Lee, Kyong Taek

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  1. 1
    Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric

    Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric by Hyun-Sik Choi, Seung-Ho Hong, Rock-Hyun Baek, Kyong-Taek Lee, Chang-Yong Kang, Jammy, R., Byoung-Hun Lee, Sung-Woo Jung, Yoon-Ha Jeong

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  2. 2
    Technology scaling on High-K & Metal-Gate FinFET BTI reliability

    Technology scaling on High-K & Metal-Gate FinFET BTI reliability by Kyong Taek Lee, Wonchang Kang, Eun-Ae Chung, Gunrae Kim, Hyewon Shim, Hyunwoo Lee, Hyejin Kim, Minhyeok Choe, Nae-In Lee, Patel, Anuj, Junekyun Park, Jongwoo Park

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  3. 3
    Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain Reflectometry

    Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain Reflectometry by Yonghun Kim, Young Gon Lee, Ukjin Jung, Jin Ju Kim, Minhyeok Choe, Kyong Taek Lee, Sangwoo Pae, Jongwoo Park, Byoung Hun Lee

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  4. 4
    PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High- k Dielectrics

    PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High- k Dielectrics by Kyong Taek Lee, Chang Yong Kang, Ook Sang Yoo, Rino Choi, Byoung Hun Lee, Lee, J.C., Hi-Deok Lee, Yoon-Ha Jeong

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  5. 5
    Interfacial-Layer-Driven Dielectric Degradation and Breakdown of HfSiON/SiON Gate Dielectric nMOSFETs

    Interfacial-Layer-Driven Dielectric Degradation and Breakdown of HfSiON/SiON Gate Dielectric nMOSFETs by CHOI, Do-Young, KYONG TAEK LEE, BAEK, Chang-Ki, CHANG WOO SOHN, HYUN CHUL SAGONG, JUNG, Eui-Young, LEE, Jeong-Soo, JEONG, Yoon-Ha

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  6. 6
    New observations on the random telegraph noise induced Vth variation in nano-scale MOSFETs

    New observations on the random telegraph noise induced Vth variation in nano-scale MOSFETs by Changze Liu, Kyong Taek Lee, Hyunwoo Lee, Yoohwan Kim, Sangwoo Pae, Jongwoo Park

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  7. 7
    Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs

    Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs by Park, Min Sang, Kim, Yonghyun, Lee, Kyong Taek, Kang, Chang Yong, Min, Byoung-Gi, Oh, Jungwoo, Majhi, Prashant, Tseng, Hsing-Huang, Lee, Jack C., Banerjee, Sanjay K., Lee, Jeong-Soo, Jammy, Raj, Jeong, Yoon-Ha

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  8. 8
    A Study of Strain Engineering Using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress

    A Study of Strain Engineering Using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress by Kyong Taek Lee, Chang Yong Kang, Min-Sang Park, Byoung Hun Lee, Ho Kyung Park, Hyun Sang Hwang, Hsing-Huang Tseng, Jammy, R., Yoon-Ha Jeong

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  9. 9
    RF and hot carrier effects in metal gate/high-k dielectric nMOSFETs at cryogenic temperature

    RF and hot carrier effects in metal gate/high-k dielectric nMOSFETs at cryogenic temperature by Hyun Chul Sagong, Kyong Taek Lee, Seung-Ho Hong, Hyun-Sik Choi, Gil-Bok Choi, Rock-Hyun Baek, Seung-Hyun Song, Min-Sang Park, Jae Chul Kim, Yoon-Ha Jeong, Sung-Woo Jung, Chang Yong Kang

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  10. 10
    Frequency dependent TDDB behaviors and its reliability qualification in 32nm high-k/metal gate CMOSFETs

    Frequency dependent TDDB behaviors and its reliability qualification in 32nm high-k/metal gate CMOSFETs by Kyong Taek Lee, Jongik Nam, Minjung Jin, Kidan Bae, Junekyun Park, Lira Hwang, Jungin Kim, Hyunjin Kim, Jongwoo Park

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  11. 11
    A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs

    A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs by KYONG TAEK LEE, CHANG YONG KANG, BYOUNG HUN LEE, BERSUKER, Gennadi, TSENG, Hsing-Huang, JAMMY, Raj, JEONG, Yoon-Ha, CHOI, Hyun-Sik, HONG, Seung-Ho, CHOI, Gil-Bok, JAE CHUL KIM, SONG, Seung-Hyun, BAEK, Rock-Hyun, PARK, Min-Sang, HYUN CHUL SAGONG

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  12. 12
    Reliability of HFO2/SIO2 dielectric with strain engineering using CESL stressor

    Reliability of HFO2/SIO2 dielectric with strain engineering using CESL stressor by Jae Chul Kim, Kyong Taek Lee, Seung Hyun Song, Min Sang Park, Seung Ho Hong, Gil Bok Choi, Hyun Sik Choi, Rock Hyun Baek, Hyun Chul Sagong, Yoon-Ha Jeong, Sung Woo Jung, Chang Young Kang

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  13. 13
    The Effect of a Si Capping Layer on RF Characteristics of High- k /Metal Gate SiGe Channel pMOSFETs

    The Effect of a Si Capping Layer on RF Characteristics of High- k /Metal Gate SiGe Channel pMOSFETs by Min Sang Park, Kyong Taek Lee, Chang Yong Kang, Gil-Bok Choi, Hyun Chul Sagong, Chang Woo Sohn, Byoung-Gi Min, Jungwoo Oh, Majhi, Prashant, Hsing-Huang Tseng, Lee, Jack C, Jeong-Soo Lee, Jammy, Raj, Yoon-Ha Jeong

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  14. 14
    Gate stack process optimization for TDDB improvement in 28nm high-k/metal gate nMOSFETs

    Gate stack process optimization for TDDB improvement in 28nm high-k/metal gate nMOSFETs by Kyong Taek Lee, Hyunjin Kim, Junekyun Park, Jongwoo Park

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  15. 15
    Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs

    Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs by Yoo, Ook Sang, Oh, Jungwoo, Min, Kyung Seok, Kang, Chang Yong, Lee, B.H., Lee, Kyong Taek, Na, Min Ki, Kwon, Hyuk-Min, Majhi, P., Tseng, H-H, Jammy, Raj, Wang, J.S., Lee, Hi-Deok

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  16. 16
    Effects of In Situ O2 Plasma Treatment on OFF-State Leakage and Reliability in Metal-Gate/High-k Dielectric MOSFETs

    Effects of In Situ O2 Plasma Treatment on OFF-State Leakage and Reliability in Metal-Gate/High-k Dielectric MOSFETs by KYONG TAEK LEE, CHANG YONG KANG, JEONG, Yoon-Ha, BYUNG SUN JU, CHOI, Rino, KYUNG SEOK MIN, OOK SANG YOO, BYOUNG HUN LEE, JAMMY, Raj, LEE, Jack C, LEE, Hi-Deok

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  17. 17
    A comparative study of reliability and performance of strain engineering using CESL stressor and mechanical strain

    A comparative study of reliability and performance of strain engineering using CESL stressor and mechanical strain by Kyong Taek Lee, Chang Yong Kang, Ook Sang Yoo, Chadwin, D., Bersuker, G., Ho Kyung Park, Jun Myung Lee, Hyung Sang Hwang, Byoung Hun Lee, Hi-Deok Lee, Yoon-Ha Jeong

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  18. 18
    New observations on hot carrier induced dynamic variation in nano-scaled SiON/poly, HK/MG and FinFET devices based on on-the-fly HCI technique: The role of single trap induced degradation

    New observations on hot carrier induced dynamic variation in nano-scaled SiON/poly, HK/MG and FinFET devices based on on-the-fly HCI technique: The role of single trap induced degr... by Changze Liu, Kyong Taek Lee, Sangwoo Pae, Jongwoo Park

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  19. 19
    RF performance degradation in 100-nm metal gate/high-k dielectric nMOSFET by hot carrier effects

    RF performance degradation in 100-nm metal gate/high-k dielectric nMOSFET by hot carrier effects by Hyun Chul Sagong, Kyong Taek Lee, Chang Yong Kang, Gil-Bok Choi, Hyun-Sik Choi, Rock-Hyun Baeka, Min-Sang Park, Sung-Woo Jung, Yoon-Ha Jeong

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  20. 20
    Test Structures for Accurate UHF C-V Measurements of Nano-Scale CMOSFETs with HfSiON and TiN Metal Gate

    Test Structures for Accurate UHF C-V Measurements of Nano-Scale CMOSFETs with HfSiON and TiN Metal Gate by Kyong-Taek Lee, Schmitz, J., Brown, G.A., Dawei Heh, Rino Choi, Harris, R., Seung-Chul Song, Byoung Hun Lee, In-Shik Han, Hi-Deok Lee, Yoon-Ha Jeong

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