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    Electrical characterization of gate electrode recess depth in ultra-thick SiO2, vertical trench DMOS

    Electrical characterization of gate electrode recess depth in ultra-thick SiO2, vertical trench DMOS by Kamaruddin, Mohd Hanif, Soin, Norhayati, Low Hooi Yee, Chyuan, Candy Choo Kai, Lee Nean Sem

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