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Expansion of lattice constants of aluminum nitride thin film prepared on sapphire substrate by ECR plasma sputtering method
by
Kaneko, Satoru
,
Torii, Hironori
,
Amazawa, Takao
,
Ito, Takeshi
,
Yasui, Manabu
,
Kurouchi, Masahito
,
Fukushima, Akinori
,
Tokumasu, Takashi
,
Lee, Seughwan
,
Park, Sungkyun
,
Takikawa, Hirofumi
,
Yoshimoto, Mamoru
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Japanese Journal of Applied Physics
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Properties of epitaxial AlN thin film deposited on sapphire substrate by ECR plasma
by
Kaneko, Satoru
,
Ito, Takeshi
,
Yasui, Manabu
,
Kurouchi, Masahito
,
Nagano, Takatoshi
,
Torii, Hironori
,
Amazawa, Takao
,
Lee Seughwan
,
Sungkyun Park
,
Tikumasu, Takashi
,
Takikawa, Hirofumi
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Japanese Journal Of Applied Physics
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Jpn. J. Appl. Phys. Vol.53
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Subjects
Epitaxial Growth
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Aluminam Nitridet
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Aluminum Nitride
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Atomic Force Microscopy
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Crystal Structure
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Deposition
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Ecr-Sputtering
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Energy Gap
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Epitaxial
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First Priciple Theory
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Iii-V Semiconductor Materials
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Lattice Parameters
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Lattices
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Photonic Band Gap
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Physical Sciences
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Physics
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Physics, Applied
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Plasmas
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Sapphire
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Science & Technology
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Ieee Electronic Library (Iel) Conference Proceedings
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Iopscience Journals
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