Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements by Lelis, A.J., Habersat, D., Green, R., Ogunniyi, A., Gurfinkel, M., Suehle, J., Goldsman, N.

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Effect of Threshold-Voltage Instability on SiC DMOSFET Reliability by Lelis, A.J., Green, R., Habersat, D., Goldsman, N.

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Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance by Lenahan, P.M., Anders, M.A., Waskiewicz, R.J., Lelis, A.J.

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The nature of the trapped hole annealing process by Lelis, A.J., Oldham, T.R., Boesch, H.E., McLean, F.B.

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Interface Traps in Silicon Carbide MOSFETs by Cochrane, C.J., Lenahan, P.M., Lelis, A.J.

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Response of interface traps during high-temperature anneals (MOSFETs) by Lelis, A.J., Oldham, T.R., DeLancey, W.M.

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Time dependence of switching oxide traps by Lelis, A.J., Oldham, T.R.

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Reliability effects of X-ray lithography exposures on submicron-channel MOSFETs by Lelis, A.J., Oldham, T.R.

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Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast [Formula Omitted]-[Formula Omitted] Techniques by Gurfinkel, M, Xiong, H D, Cheung, K P, Suehle, J S, Bernstein, J B, Shapira, Y, Lelis, A J, Habersat, D, Goldsman, N

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Interface Traps in Silicon Carbide MOSFETs by Cochrane, C.J., Lenahan, P. M., Lelis, A.J.

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Ultra-Fast Characterization of Transient Gate Oxide Trapping in SiC Mosfets by Gurfinkel, M., Suehle, J., Bernstein, J.B., Shapira, Y., Lelis, A.J., Habersat, D., Goldsman, N.

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AlN thin films deposited by pulsed laser ablation, sputtering and filtered arc techniques by Bathe, Ravi, Vispute, R.D, Habersat, Dan, Sharma, R.P, Venkatesan, T, Scozzie, C.J, Ervin, Matt, Geil, B.R, Lelis, A.J, Dikshit, S.J, Bhattacharya, R

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Electron spin resonance evidence that E'(gamma) centers can behave as switching oxide traps by Conley, J F, Lenahan, P M, Lelis, A J, Oldham, T R

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Modeling and Characterization of Bias Stress-Induced Instability of SiC MOSFETs by Lelis, A.J., Potbhare, S., Habersat, D., Pennington, G., Goldsman, N.

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Ultra-Fast Measurements of VTH Instability in SiC MOSFETs due to Positive and Negative Constant Bias Stress by Gurfinkel, M., Suehle, J., Bernstein, J.B., Shapira, Y., Lelis, A.J., Habersat, D., Goldsman, N.

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Reversibility of trapped hole annealing by Lelis, A.J., Boesch, H.E., Oldham, T.R., McLean, F.B.

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Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels by Gurfinkel, M., Jinwoo Kim, Potbhare, S., Xiong, H.D., Cheung, K.P., Suehle, J., Bernstein, J.B., Shapira, Y., Lelis, A.J., Habersat, D., Goldsman, N.

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Radiation response of advanced commercial SRAMs by Lelis, A.J., Murrill, S.R., Oldham, T.R., Robertson, D.N., Manning, M.

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Electron spin resonance evidence that E'/sub /spl gamma// centers can behave as switching oxide traps by Conley, J.F., Lenahan, P.M., Lelis, A.J., Oldham, T.R.

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X-ray lithography effects on MOS oxides by Lelis, A.J., Oldham, T.J.

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