Search Results - Lepore, A.N.

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  1. 1
    Charge control, DC, and RF performance of a 0.35- mu m pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistor

    Charge control, DC, and RF performance of a 0.35- mu m pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistor by Nguyen, L.D., Schaff, W.J., Tasker, P.J., Lepore, A.N., Palmateer, L.F., Foisy, M.C., Eastman, L.F.

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  2. 2
    Indium-phosphide-based microresonator modulators and wavelength multiplexers

    Indium-phosphide-based microresonator modulators and wavelength multiplexers by Abeles, J.H., Kwakernaak, M.H., Mohseni, H., Lepore, A.N., Pajer, G.A., Griffel, G., Lee, T.P., Braun, A.M., Bechtle, D.R., Shellenbarger, Z.A., Adesida, I., Rommel, S., Bae, J.W., Jang, J.H.

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  3. 3
    Microwave performance of low-power ion-implanted 0.25-micron gate GaAs MESFET for low-cost MMIC's applications

    Microwave performance of low-power ion-implanted 0.25-micron gate GaAs MESFET for low-cost MMIC's applications by Apostolakis, P.J., Middleton, J., Kruse, J., Scherrer, D., Barlage, D., Feng, M., Lepore, A.N.

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  4. 4
    Noise performance of low power 0.25 micron gate ion implanted D-mode GaAs MESFET for wireless applications

    Noise performance of low power 0.25 micron gate ion implanted D-mode GaAs MESFET for wireless applications by Apostolakis, P.J., Middleton, J.R., Scherrer, D., Feng, M., Lepore, A.N.

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  5. 5
    Highly linear and efficient GaInAsP-InP phase modulators

    Highly linear and efficient GaInAsP-InP phase modulators by Mohseni, H., An, H., Shellenbarger, Z.A., Kwakernaak, M.H., Lepore, A.N., Abeles, J.H., Delfyett, P.J.

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  6. 6
    IIA-3 enhancement of 2DEG density in GaAs/InGaAs/AlGaAs double heterojunction power MODFET structures by buried superlattice and buried p+-GaAs buffer layers

    IIA-3 enhancement of 2DEG density in GaAs/InGaAs/AlGaAs double heterojunction power MODFET structures by buried superlattice and buried p+-GaAs buffer layers by Chen, Y.K., Radulescu, D.C., Lepore, A.N., Foisy, M.C., Wang, G.W., Tasker, P.J., Eastman, L.F.

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  7. 7
    Bias-Dependent Microwave Characteristics of Atomic Planar-Doped AIGaAs/InGaAs/GaAs Double Heterojunction MODFET's (Short Paper)

    Bias-Dependent Microwave Characteristics of Atomic Planar-Doped AIGaAs/InGaAs/GaAs Double Heterojunction MODFET's (Short Paper) by Chen, Y.K., Wang, G.W., Radulescu, D.C., Lepore, A.N., Tasker, P.J., Eastman, L.F., Strid, E.

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  8. 8
    Electro-refractive low loss MMI-coupled ring resonators

    Electro-refractive low loss MMI-coupled ring resonators by Kwakernaak, M.H., Lepore, A.N., Mohseni, H., An, H., Shellenbarger, Z.A., Abeles, J.H., Bac, J.-O., Rommel, S.L., Adesida, I.

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  9. 9
    Wavelength selective WDM modulator with high-Q ring resonators in deeply etched InP/InGaAsP waveguides

    Wavelength selective WDM modulator with high-Q ring resonators in deeply etched InP/InGaAsP waveguides by Kwakernaak, M.H., Lepore, A.N., Mohseni, H., Maley, N., An, H., Shellenbarger, Z.A., Braun, A.M., Chan, W.K., Abeles, J.H., Bae, J.W., Jang, J.H., Adesida, L.

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