Platinum and Rhodium Silicide–Germanide Optoelectronics by Lepselter, M.P., Fiory, A.T., Ravindra, N.M.

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SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain by Lepselter, M.P., Sze, S.M.

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Reverse current-voltage characteristics of metal-silicide Schottky diodes by Andrews, J.M., Lepselter, M.P.

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MA-1 an overview of VLSI by Lepselter, M.P.

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Selicon picocircuits by Lepselter, M.P.

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A systems approach to 1-µm NMOS by Lepselter, M.P., Alles, D.S., Levinstein, H.J., Smith, G.E., Watson, H.A.

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A method of tungsten dopant deposition for dual-dielectric charge-storage cells by Ligenza, J.R., Kahng, D., Lepselter, M.P., Labate, E.

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Reverse current-voltage characteristics of metal silicide Schottky diodes by Andrews, J.M., Lepselter, M.P.

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Near ideal metal-semiconductor barriers by Lepselter, M.P., Sze, S.M.

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SB-IGFET, II: An ion implanted IGFET using Schottky barriers by Lepselter, M.P., MacRae, A.U., MacDonald, R.W.

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Schottky barrier avalanche photodiodes by Melchior, H., Lepselter, M.P., Sze, S.M.

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Metal-semiconductor impatt diode by Sze, S.M., Lepselter, M.P., Macdonald, R.W.

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Beam-lead devices and integrated circuits by Lepselter, M.P., Waggener, H.A., MacDonald, R.W., Davis, R.E.

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Low-power bipolar transistor memory cells by Hodges, D.A., Lepselter, M.P., Lynes, D.J., MaCdonald, R.W., Macrae, A.U., Waggener, H.A.

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Radiation resistant solar cells for communication satellites by Smith, K.D., Ansley, W.G., Ciccolella, D.F., Lepselter, M.P.

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