Titanium nitride as electrode for MOS technology and Schottky diode: Alternative extraction method of titanium nitride work function by Lima, L.P.B., Diniz, J.A., Doi, I., Godoy Fo, J.

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Monolithic Complementary Field Effect Transistors (CFET) Demonstrated using Middle Dielectric Isolation and Stacked Contacts by Demuynck, S., Gonzalez, V. Vega, de Carvalho Cavalcante, C. Toledo, Lima, L.P.B., Stiers, K., Sheng, C., Vandooren, A., Hosseini, M., Zhou, X., Mertens, H., Chiarella, T., Bommels, J., Loo, R., Rosseel, E., Porret, C., Shimura, Y., Akula, A., Mannaert, G., Choudhury, S., Brissonneau, V., Dupuy, E., Sarkar, T., Vergel, N. Franchina, Peter, A., Jourdan, N., Soulie, J.P., Vandersmissen, K., Sebaai, F., Gowda, P. Puttarame, Lai, K., Mingardi, A., Sarkar, S. Sumar, Dhave, K., Chan, B. T., Marquez, A. Sepulveda, Langer, R., Koo, I. Gyo, Sanchez, E. Altamirano, Devriendt, K., Delgadillo, P. Rincon, Lazzarino, F., Mitard, J., Geypen, J., Grieten, E., Batuk, D., Chen, Y-F., Verbeek, F., Holsteyns, F., Subramanian, S., Horiguchi, N., Biesemans, S.

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TiN/titanium–aluminum oxynitride/Si as new gate structure for 3D MOS technology by Miyoshi, J., Lima, L.P.B., Diniz, J.A., Cavarsan, F.A., Doi, I., Godoy Filho, J., Silva, A.R.

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New soft-switched power converter topologies for variable reluctance machine drives by de Oliveira, L.P.B., da Silva, E.R., Lima, A.M.N., Jacobina, C.B.

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