Exciton-polaron Rydberg states in monolayer MoSe2 and WSe2 by Liu, Erfu, van Baren, Jeremiah, Lu, Zhengguang, Taniguchi, Takashi, Watanabe, Kenji, Smirnov, Dmitry, Chang, Yia-Chung, Lui, Chun Hung

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Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2 by Wang, Yaojia, Liu, Erfu, Liu, Huimei, Pan, Yiming, Zhang, Longqiang, Zeng, Junwen, Fu, Yajun, Wang, Miao, Xu, Kang, Huang, Zhong, Wang, Zhenlin, Lu, Hai-Zhou, Xing, Dingyu, Wang, Baigeng, Wan, Xiangang, Miao, Feng

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Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors by Liu, Erfu, Fu, Yajun, Wang, Yaojia, Feng, Yanqing, Liu, Huimei, Wan, Xiangang, Zhou, Wei, Wang, Baigeng, Shao, Lubin, Ho, Ching-Hwa, Huang, Ying-Sheng, Cao, Zhengyi, Wang, Laiguo, Li, Aidong, Zeng, Junwen, Song, Fengqi, Wang, Xinran, Shi, Yi, Yuan, Hongtao, Hwang, Harold Y., Cui, Yi, Miao, Feng, Xing, Dingyu

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Broadband Photovoltaic Detectors Based on an Atomically Thin Heterostructure by Long, Mingsheng, Liu, Erfu, Wang, Peng, Gao, Anyuan, Xia, Hui, Luo, Wei, Wang, Baigeng, Zeng, Junwen, Fu, Yajun, Xu, Kang, Zhou, Wei, Lv, Yangyang, Yao, Shuhua, Lu, Minghui, Chen, Yanfeng, Ni, Zhenhua, You, Yumeng, Zhang, Xueao, Qin, Shiqiao, Shi, Yi, Hu, Weida, Xing, Dingyu, Miao, Feng

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Gate-tunable rectification inversion and photovoltaic detection in graphene/WSe2 heterostructures by Gao, Anyuan, Liu, Erfu, Long, Mingsheng, Zhou, Wei, Wang, Yiyan, Xia, Tianlong, Hu, Weida, Wang, Baigeng, Miao, Feng

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High Responsivity Phototransistors Based on Few-Layer ReS2 for Weak Signal Detection by Liu, Erfu, Long, Mingsheng, Zeng, Junwen, Luo, Wei, Wang, Yaojia, Pan, Yiming, Zhou, Wei, Wang, Baigeng, Hu, Weida, Ni, Zhenhua, You, Yumeng, Zhang, Xueao, Qin, Shiqiao, Shi, Yi, Watanabe, Kenji, Taniguchi, Takashi, Yuan, Hongtao, Hwang, Harold Y., Cui, Yi, Miao, Feng, Xing, Dingyu

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Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus by Long, Mingsheng, Gao, Anyuan, Wang, Peng, Xia, Hui, Ott, Claudia, Pan, Chen, Fu, Yajun, Liu, Erfu, Chen, Xiaoshuang, Lu, Wei, Nilges, Tom, Xu, Jianbin, Wang, Xiaomu, Hu, Weida, Miao, Feng

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Gate-Induced Interfacial Superconductivity in 1T-SnSe2 by Zeng, Junwen, Liu, Erfu, Fu, Yajun, Chen, Zhuoyu, Pan, Chen, Wang, Chenyu, Wang, Miao, Wang, Yaojia, Xu, Kang, Cai, Songhua, Yan, Xingxu, Wang, Yu, Liu, Xiaowei, Wang, Peng, Liang, Shi-Jun, Cui, Yi, Hwang, Harold Y, Yuan, Hongtao, Miao, Feng

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Experimental Identification of Critical Condition for Drastically Enhancing Thermoelectric Power Factor of Two-Dimensional Layered Materials by Zeng, Junwen, He, Xin, Liang, Shi-Jun, Liu, Erfu, Sun, Yuanhui, Pan, Chen, Wang, Yu, Cao, Tianjun, Liu, Xiaowei, Wang, Chenyu, Zhang, Lili, Yan, Shengnan, Su, Guangxu, Wang, Zhenlin, Watanabe, Kenji, Taniguchi, Takashi, Singh, David J, Zhang, Lijun, Miao, Feng

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Electric-field tunable Type-I to Type-II band alignment transition in MoSe2/WS2 heterobilayers by Kistner-Morris, Jed, Shi, Ao, Liu, Erfu, Arp, Trevor, Farahmand, Farima, Taniguchi, Takashi, Watanabe, Kenji, Aji, Vivek, Lui, Chun Hung, Gabor, Nathaniel

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Intrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-doping by Fu, Yajun, Long, Mingsheng, Gao, Anyuan, Wang, Yu, Pan, Chen, Liu, Xiaowei, Zeng, Junwen, Xu, Kang, Zhang, Lili, Liu, Erfu, Hu, Weida, Wang, Xiaomu, Miao, Feng

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Gated tuned superconductivity and phonon softening in monolayer and bilayer MoS2 by Fu, Yajun, Liu, Erfu, Yuan, Hongtao, Tang, Peizhe, Lian, Biao, Xu, Gang, Zeng, Junwen, Chen, Zhuoyu, Wang, Yaojia, Zhou, Wei, Xu, Kang, Gao, Anyuan, Pan, Chen, Wang, Miao, Wang, Baigeng, Zhang, Shou-Cheng, Cui, Yi, Hwang, Harold Y., Miao, Feng

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Gate Tunable Dark Trions in Monolayer WSe2 by Liu, Erfu, van Baren, Jeremiah, Lu, Zhengguang, Altaiary, Mashael M., Taniguchi, Takashi, Watanabe, Kenji, Smirnov, Dmitry, Lui, Chun Hung

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Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe 2 by Wang, Yaojia, Liu, Erfu, Liu, Huimei, Pan, Yiming, Zhang, Longqiang, Zeng, Junwen, Fu, Yajun, Wang, Miao, Xu, Kang, Huang, Zhong, Wang, Zhenlin, Lu, Hai-Zhou, Xing, Dingyu, Wang, Baigeng, Wan, Xiangang, Miao, Feng

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Negative Photoconductance in van der Waals Heterostructure-Based Floating Gate Phototransistor by Wang, Yu, Liu, Erfu, Gao, Anyuan, Cao, Tianjun, Long, Mingsheng, Pan, Chen, Zhang, Lili, Zeng, Junwen, Wang, Chenyu, Hu, Weida, Liang, Shi-Jun, Miao, Feng

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Excitonic and Valley-Polarization Signatures of Fractional Correlated Electronic Phases in a WSe2/WS2 Moiré Superlattice by Liu, Erfu, Taniguchi, Takashi, Watanabe, Kenji, Gabor, Nathaniel M, Cui, Yong-Tao, Lui, Chun Hung

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Multipath Optical Recombination of Intervalley Dark Excitons and Trions in Monolayer WSe2 by Liu, Erfu, van Baren, Jeremiah, Liang, Ching-Tarng, Taniguchi, Takashi, Watanabe, Kenji, Gabor, Nathaniel M, Chang, Yia-Chung, Lui, Chun Hung

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Landau-Quantized Excitonic Absorption and Luminescence in a Monolayer Valley Semiconductor by Liu, Erfu, van Baren, Jeremiah, Taniguchi, Takashi, Watanabe, Kenji, Chang, Yia-Chung, Lui, Chun Hung

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Optical absorption of interlayer excitons in transition-metal dichalcogenide heterostructures by Barré, Elyse, Karni, Ouri, Liu, Erfu, O'Beirne, Aidan L, Chen, Xueqi, Ribeiro, Henrique B, Yu, Leo, Kim, Bumho, Watanabe, Kenji, Taniguchi, Takashi, Barmak, Katayun, Lui, Chun Hung, Refaely-Abramson, Sivan, da Jornada, Felipe H, Heinz, Tony F

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Signatures of moiré trions in WSe2/MoSe2 heterobilayers by Liu, Erfu, Barré, Elyse, van Baren, Jeremiah, Wilson, Matthew, Taniguchi, Takashi, Watanabe, Kenji, Cui, Yong-Tao, Gabor, Nathaniel M., Heinz, Tony F., Chang, Yia-Chung, Lui, Chun Hung

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