Search Results - Longenbach, K.F.

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  1. 1
    High-breakdown-voltage AlSbAs/InAs n-channel field-effect transistors

    High-breakdown-voltage AlSbAs/InAs n-channel field-effect transistors by Li, X., Longenbach, K.F., Wang, Y., Wang, W.I.

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  2. 2
    A complementary heterostructure field effect transistor technology based on InAs/AlSb/GaSb

    A complementary heterostructure field effect transistor technology based on InAs/AlSb/GaSb by Longenbach, K.F., Beresford, R., Wang, W.I.

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  3. 3
    p-channel modulation-doped field-effect transistors based on AlSb/sub 0.9/As/sub 0.1//GaSb

    p-channel modulation-doped field-effect transistors based on AlSb/sub 0.9/As/sub 0.1//GaSb by Luo, L.F., Longenbach, K.F., Wang, W.I.

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  4. 4
    Resonant tunneling in polytype InAs/AlSb/GaSb heterostructures

    Resonant tunneling in polytype InAs/AlSb/GaSb heterostructures by Longenbach, K.F., Luo, L.F., Xin, S., Wang, W.I.

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  5. 5
    Resonant interband tunneling device with multiple negative differential resistance regions

    Resonant interband tunneling device with multiple negative differential resistance regions by Beresford, R., Luo, L.F., Longenbach, K.F., Wang, W.I.

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  6. 6
    Application of split-gate and dual-gate field-effect transistor designs to InAs field-effect transistors

    Application of split-gate and dual-gate field-effect transistor designs to InAs field-effect transistors by Longenbach, K.F., Beresford, R., Wang, W.I.

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  7. 7
    Contact resistance degradation in z-axis connectors operated at burn-in temperatures

    Contact resistance degradation in z-axis connectors operated at burn-in temperatures by Guarin, F.J., Longenbach, K.F.

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    Conference Proceeding
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  8. 8
    High performance GaSb p-channel MODFETs

    High performance GaSb p-channel MODFETs by Luo, L.F., Longenbach, K.F., Wang, W.I.

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  9. 9
    Polytype InAs/AlSb/GaSb for field-effect transistor applications

    Polytype InAs/AlSb/GaSb for field-effect transistor applications by Longenbach, K.F., Li, X., Wang, Y., Wang, W.I.

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