High-performance InGaAs-InP APDs on GaAs by Franco, D.S., Vaccaro, K., Clark, W.R., Teynor, W.A., Dauplaise, H.M., Roland, M., Krejca, B., Lorenzo, J.P.

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Gigahertz InGaAs-based vertical Schottky diode optical detectors by substrate removal by Vaccaro, K., Spaziani, S.M., Martin, E.A., Lorenzo, J.P.

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Incoherent annealing of implanted layers in GaAs by Davies, D.E., McNally, P.J., Lorenzo, J.P., Julian, M.

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Insulator-metal transition versus temperature for the CDW of the 1D adiabatic Holstein model by Lorenzo, J.P., Aubry, S.

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N-type doping of indium phosphide by implantation by Davies, D.Eirug, Lorenzo, J.P., Ryan, T.G.

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High-performance substrate-removed InGaAs Schottky photodetectors by Spaziani, S.M., Vaccaro, K., Lorenzo, J.P.

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Epilayer transfer for integration of III-V photodetectors onto a silicon platform using Au-Sn and Pd-Ge bonding by Chen, T.D., Spaziani, S.M., Vaccaro, K., Lorenzo, J.P., Jokerst, N.M.

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A patterned and passivated organic-inorganic semiconductor heterojunction diode by Prabhakar, V., Forrest, S.R., Lorenzo, J.P., Vaccaro, K.

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Passivation of InP with thin layers of MBE-grown CdS by Dauplaise, H.M., Vaccaro, K., Davis, A., Waters, W.D., Lorenzo, J.P.

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Electrical characterization of CdS passivation on InP by He, L., Dauplaise, H., Davis, A., Martin, E., Spaziani, S., Vaccaro, K., Waters, W., Lorenzo, J.P.

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Inverted, substrate-removed vertical Schottky diode optical detectors by Spaziani, S.M., Vaccaro, K., Wohlmuth, W.A., Martin, E.A., Lorenzo, J.P.

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Processing and interface analysis of CdS-passivated InP by Dauplaise, H.M., Vaccaro, K., Davis, A., Waters, W.D., Lorenzo, J.P.

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Investigations of the Faraday effect in Fe-doped InP by Stadler, B.J., Lorenzo, J.P., Bliss, D.F.

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InP-based MISFETs using CdS passivation by Vaccaro, K., Davis, A., Dauplaise, H.M., Lorenzo, J.P.

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IIIb-7 isolation and n-type conduction from implantation in InP by Davies, D.E., Lorenzo, J.P.

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Pulse annealing of implanted InP with minimal phosphorus loss by Davies, D.E., Kennedy, E.F., Lorenzo, J.P.

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Compensation from implantation damage in InP by Davies, D. Eirug, Lorenzo, J. P., Deane, M. L.

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Inverted, substrate-removed MSM and Schottky diode optical detectors by Vaccaro, K., Spaziani, S.M., Dauplaise, H.M., Berger, P.R., Davis, A., Tsacoyeanes, C.W., Martin, E.A., Lorenzo, J.P.

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TA-A4 n-type doping of InP by implantation and electron-beam annealing by Davies, D.E., Lorenzo, J.P., Comer, J.J., Ryan, T.G.

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Processing and design techniques for InGaAs/InAlAs/InP photoFETs and MSMs by Martin, E.A., Vaccaro, K., Waters, W., Spaziani, S., Lorenzo, J.P., Robinson, G.

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