Search Results - Lorenzzi, J

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  1. 1
    Effect of initial substrate conditions on growth of cubic silicon carbide

    Effect of initial substrate conditions on growth of cubic silicon carbide by Vasiliauskas, R., Marinova, M., Syväjärvi, M., Liljedahl, R., Zoulis, G., Lorenzzi, J., Ferro, G., Juillaguet, S., Camassel, J., Polychroniadis, E.K., Yakimova, R.

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  2. 2
    3C–SiC Heteroepitaxial Growth by Vapor–Liquid–Solid Mechanism on Patterned 4H–SiC Substrate Using Si–Ge Melt

    3C–SiC Heteroepitaxial Growth by Vapor–Liquid–Solid Mechanism on Patterned 4H–SiC Substrate Using Si–Ge Melt by Lorenzzi, J, Lazar, M, Tournier, D, Jegenyes, N, Carole, D, Cauwet, F, Ferro, G

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  3. 3
    Incorporation of group III, IV and V elements in 3C–SiC(1 1 1) layers grown by the vapour–liquid–solid mechanism

    Incorporation of group III, IV and V elements in 3C–SiC(1 1 1) layers grown by the vapour–liquid–solid mechanism by Lorenzzi, J., Zoulis, G., Marinova, M., Kim-Hak, O., Sun, J.W., Jegenyes, N., Peyre, H., Cauwet, F., Chaudouët, P., Soueidan, M., Carole, D., Camassel, J., Polychroniadis, E.K., Ferro, G.

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  4. 4
    Study of the 3C-SiC nucleation from a liquid phase on a C face 6H-SiC substrate

    Study of the 3C-SiC nucleation from a liquid phase on a C face 6H-SiC substrate by Kim-Hak, Olivier, Ferro, Gabriel, Dazord, Jacques, Marinova, Maya, Lorenzzi, Jean, Polychroniadis, Efstathios, Chaudouët, Patrick, Chaussende, Didier, Miele, Philippe

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  5. 5
    Combined effects of Ga, N, and Al codoping in solution grown 3C-SiC

    Combined effects of Ga, N, and Al codoping in solution grown 3C-SiC by Sun, J. W., Zoulis, G., Lorenzzi, J. C., Jegenyes, N., Peyre, H., Juillaguet, S., Souliere, V., Milesi, F., Ferro, G., Camassel, J.

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  6. 6
    Evolution of 3C-SiC islands nucleated from a liquid phase on Si face α-SiC substrates

    Evolution of 3C-SiC islands nucleated from a liquid phase on Si face α-SiC substrates by Kim-Hak, Olivier, Ferro, Gabriel, Lorenzzi, Jean, Carole, Davy, Dazord, Jacques, Chaudouët, Patrick, Chaussende, Didier, Miele, Philippe

    Published in Thin solid films
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  7. 7
    Incorporation of group, IV and V elements in 3C-SiC(1 1 1) layers grown by the vapour-liquid-solid mechanism

    Incorporation of group, IV and V elements in 3C-SiC(1 1 1) layers grown by the vapour-liquid-solid mechanism by Lorenzzi, J, Zoulis, G, Marinova, M, Kim-Hak, O, Sun, J W, Jegenyes, N, Peyre, H, Cauwet, F, Chaudouet, P, Soueidan, M, Carole, D, Camassel, J, Polychroniadis, E K, Ferro, G

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  8. 8
    The Central Sensitization Inventory validated and adapted for a Brazilian population: psychometric properties and its relationship with brain-derived neurotrophic factor

    The Central Sensitization Inventory validated and adapted for a Brazilian population: psychometric properties and its relationship with brain-derived neurotrophic factor by Caumo, Wolnei, Antunes, Luciana C, Elkfury, Jéssica Lorenzzi, Herbstrith, Evelyn G, Busanello Sipmann, Raquel, Souza, Andressa, Torres, Iraci Ls, Souza Dos Santos, Vinicius, Neblett, Randy

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