Search Results - Losee, P.A.

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  1. 1
    Recent advances in silicon carbide MOSFET power devices

    Recent advances in silicon carbide MOSFET power devices by Stevanovic, L.D., Matocha, K.S., Losee, P.A., Glaser, J.S., Nasadoski, J.J., Arthur, S.D.

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  2. 2
    DC and Transient Performance of 4H-SiC Double-Implant MOSFETs

    DC and Transient Performance of 4H-SiC Double-Implant MOSFETs by Losee, Pete A., Matocha, Kevin, Arthur, Stephen D., Nasadoski, Jeffrey, Stum, Zachary, Garrett, Jerome L., Schutten, Michael, Dunne, Greg, Stevanovic, Ljubisa

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  3. 3
    6kV 4H-SiC BJTs with Specific On-resistance Below the Unipolar Limit using a Selectively Grown Base Contact Process

    6kV 4H-SiC BJTs with Specific On-resistance Below the Unipolar Limit using a Selectively Grown Base Contact Process by Balachandran, S., Li, C., Losee, P.A., Bhat, I.B., Chow, T.P.

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  4. 4
    lOkV 4H-SiC PiN Diodes Designed for Improved Switching Performance using Emitter Injection Control

    lOkV 4H-SiC PiN Diodes Designed for Improved Switching Performance using Emitter Injection Control by Losee, P.A., Li, C., Wang, Y., Sharma, S.K., Chow, T.P., Bhat, I.B., Stahlbush, R.E., Gutmann, R.J.

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  5. 5
    High Voltage 4H-SiC Epitaxial Emitter BJTs using a Self-aligned Selectively Re-grown Base Contact

    High Voltage 4H-SiC Epitaxial Emitter BJTs using a Self-aligned Selectively Re-grown Base Contact by Balachandran, S., Li, C., Losee, P.A., Chow, T. P., Bhat, I., Agarwal, A.

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  6. 6
    Degraded blocking performance of 4H-SiC rectifiers under high dV/dt conditions

    Degraded blocking performance of 4H-SiC rectifiers under high dV/dt conditions by Losee, P.A., Zhu, L., Chow, T.P., Bhat, I.B., Gutmann, R.J.

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  7. 7
    Simulation, characterization and design of epitaxial emitter NPN 4H-SiC BJTs for amplifier applications

    Simulation, characterization and design of epitaxial emitter NPN 4H-SiC BJTs for amplifier applications by Losee, P.A., Gutmann, R.J., Chow, T.P., Ryu, S.-H., Agarwal, A.K., Palmour, J.W.

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  8. 8
    Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC

    Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC by Jennings, M.R., Pérez-Tomás, A., Davies, M., Walker, D., Zhu, L., Losee, P., Huang, W., Balachandran, S., Guy, O.J., Covington, J.A., Chow, T.P., Mawby, P.A.

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  9. 9
    The surface structure and associated rehydration phenomena observed on [formula omitted]

    The surface structure and associated rehydration phenomena observed on [formula omitted] by Losee, D.B., Kassman, A.J., Wilson, P.A.

    Published in Journal of catalysis
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