Static and Dynamic Characterization of 6.5-kV 100-A SiC Bipolar PiN Diode Modules by Elasser, Ahmed, Agamy, Mohammed S., Nasadoski, Jeffrey, Losee, Peter A., Bolotnikov, Alexander V., Stum, Zachary, Raju, Ravisekhar, Stevanovic, Ljubisa, Mari, Jorge, Menzel, Matthias, Bastien, Bertrand

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High performance SiC MOSFET module for industrial applications by Stevanovic, Ljubisa, Rowden, Brian, Harfman-Todorovic, Maja, Losee, Peter, Bolotnikov, Alexander, Kennerly, Stacey, Schuetz, Tobias, Carastro, Fabio, Datta, Rajib, Fengfeng Tao, Raju, Ravi, Cioffi, Philip

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Performance Evaluation of 1.5 kV Solar Inverter With 2.5 kV Silicon Carbide mosfet by She, Xu, Losee, Peter, Hu, Huan, Earls, William, Datta, Rajib

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Overview of 1.2kV - 2.2kV SiC MOSFETs targeted for industrial power conversion applications by Bolotnikov, Alexander, Losee, Peter, Permuy, Alfred, Dunne, Greg, Kennerly, Stacey, Rowden, Brian, Nasadoski, Jeffrey, Harfman-Todorovic, Maja, Raju, Ravisekhar, Fengfeng Tao, Cioffi, Philip, Mueller, Frank J., Stevanovic, Ljubisa

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Ultra-high speed 7mohm, 650V SiC half-bridge module with robust short circuit capability for EV inverters by Bhalla, Anup, Nava, Melvin, Zhu, Mike, Sudario, Frank, Sumaoang, Deborah, Alexandrov, Peter, Li, Xueqing, Losee, Peter

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3.3kV SiC MOSFETs designed for low on-resistance and fast switching by Bolotnikov, A., Losee, P., Matocha, K., Glaser, J., Nasadoski, J., Lei Wang, Elasser, A., Arthur, S., Stum, Z., Sandvik, P., Sui, Y., Johnson, T., Sabate, J., Stevanovic, L.

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Recent advances in silicon carbide MOSFET power devices by Stevanovic, L.D., Matocha, K.S., Losee, P.A., Glaser, J.S., Nasadoski, J.J., Arthur, S.D.

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Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications by Glaser, J S, Nasadoski, J J, Losee, P A, Kashyap, A S, Matocha, K S, Garrett, J L, Stevanovic, L D

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Evaluation of 2.5 kV Silicon Carbide MOSFET for 1.5 kV Solar Inverter Application by She, Xu, Losee, Peter, Hu, Huan, Earls, William, Datta, Rajib

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SiC Device Junction Temperature Online Monitoring by Wang, Ruxi, Sabate, Juan, Mainali, Krishna, Sadilek, Tomas, Losee, Peter, Singh, Yash

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3000V, 25A pulse power asymmetrical highly interdigitated SiC Thyristors by Elasser, A., Losee, P., Arthur, S., Stum, Z., Garrett, J., Schutten, M.

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Diode snappiness from a user's perspective by Mari, Jorge, Carastro, Fabio, Kell, Max-Josef, Losee, Peter, Zoels, Thomas

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Soft recovery diodes with snappy behavior by Losee, Peter, Kell, Max-Josef, Carastro, Fabio, Mari, Jorge, Menzel, Matthias, Schuetz, Tobias, Zoels, Thomas

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Realizing the full potential of silicon carbide power devices by Stevanovic, L, Matocha, K, Stum, Z, Losee, P, Gowda, A, Glaser, J, Beaupre, R

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Static and dynamic characterization of 6.5kV, 100A SiC Bipolar PiN Diode modules by Elasser, A., Agamy, M., Nasadoski, J., Bolotnikov, A., Stum, Z., Raju, R., Stevanovic, L., Mari, J., Menzel, M., Bastien, B., Losee, P.

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Design of high voltage 4H-SiC superjunction Schottky rectifiers by Lin Zhu, Losee, P., Chow, T.P.

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DESIGN OF HIGH VOLTAGE 4H-SiC SUPERJUNCTION SCHOTTKY RECTIFIERS by Zhu, Lin, Losee, Peter, Chow, T. Paul

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The Impact of the COVID-19 Pandemic on Breast Reconstruction Practices in the United States by Joseph, Walter J, Bustos, Samyd S, Losee, Joseph E, Rubin, J Peter, DE LA Cruz, Carolyn

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Novel high-energy ion implantation facility using a 15 MV Tandem Van de Graaff accelerator by Thieberger, P., Carlson, C., Steski, D., Ghandi, R., Bolotnikov, A., Lilienfeld, D., Losee, P.

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Perceptual Barriers to Becoming a Plastic Surgeon among Underrepresented Medical Students by Williams, Abraham A., Bruce, Madeleine K., Beiriger, Justin W., Kass, Nicolás M., Littleton, Eliza Beth, Nguyen, Vu T., De La Cruz, Carolyn, Rubin, Joseph Peter, Losee, Joseph E., Goldstein, Jesse A.

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