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    Analyzing the current crowding effect induced by oxygen adsorption of amorphous InGaZnO thin film transistor by capacitance–voltage measurements

    Analyzing the current crowding effect induced by oxygen adsorption of amorphous InGaZnO thin film transistor by capacitance–voltage measurements by Huang, Sheng-Yao, Chang, Ting-Chang, Chen, Min-Chen, Jian, Fu-Yen, Chen, Shih-Cheng, Chen, Te-Chih, Jheng, Jing-Ling, Lou, Mei-Jheng, Yeh (Huang), Fon-Shan

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