Search Results - Loussier, X.

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  1. 1
    Impact of high-permittivity dielectrics on speed performances and power consumption in double-gate-based CMOS circuits

    Impact of high-permittivity dielectrics on speed performances and power consumption in double-gate-based CMOS circuits by Loussier, X., Munteanu, D., Autran, J.L.

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  2. 2
    Simulation study of circuit performances of independent double-gate (IDG) MOSFETs with high-permittivity gate dielectrics

    Simulation study of circuit performances of independent double-gate (IDG) MOSFETs with high-permittivity gate dielectrics by Loussier, X., Munteanu, D., Autran, J.L.

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  3. 3
    Compact modeling of symmetrical double-gate MOSFETs including carrier confinement and short-channel effects

    Compact modeling of symmetrical double-gate MOSFETs including carrier confinement and short-channel effects by Munteanu, D., Autran, J. L., Loussier, X., Harrison, S., Cerutti, R.

    Published in Molecular simulation
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  4. 4
    Quantum short-channel compact modeling of drain-current in double-gate MOSFET

    Quantum short-channel compact modeling of drain-current in double-gate MOSFET by Munteanu, D., Autran, J.-L., Loussier, X., Harrison, S., Cerutti, R., Skotnickit, T.

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