Environmentally Friendly Processing Technology for Engineering Silicon Nanocrystals in Water with Laser Pulses by Svrcek, V, Mariotti, D, Cvelbar, U, Filipič, G, Lozac’h, M, McDonald, C, Tayagaki, T, Matsubara, K

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The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact by Gerlach, D., Wilks, R. G., Wippler, D., Wimmer, M., Lozac'h, M., Félix, R., Mück, A., Meier, M., Ueda, S., Yoshikawa, H., Gorgoi, M., Lips, K., Rech, B., Sumiya, M., Hüpkes, J., Kobayashi, K., Bär, M.

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(Invited) Microplasmas Technologies for Engineering of Silicon Based Quantum Dot Solar Cells by Svrcek, Vladimir, Velusamy, Tamil, Lozach, Mickael, Rocks, Connor, McDonald, Calum, Mariotti, Davide

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Point defects introduced by InN alloying into In x Ga1− x N probed using a monoenergetic positron beam by Uedono, A., Tsutsui, T., Watanabe, T., Kimura, S., Zhang, Y., Lozac'h, M., Sang, L. W., Ishibashi, S., Sumiya, M.

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Point defects introduced by InN alloying into In{sub x}Ga{sub 1-x}N probed using a monoenergetic positron beam by Uedono, A., Tsutsui, T., Watanabe, T., Kimura, S., Zhang, Y., Lozac'h, M., National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Sang, L. W., Sumiya, M., Ishibashi, S.

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Atomic background in 4p elements by Padežnik-Gomilšek, J., Kodre, A., Arčon, I., Loireau-Lozac'h, A.-M., Bénazeth, S.

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An EXAFS structural approach of the lanthanum-gallium-sulfur glasses by Benazeth, S, Tuilier, M.H, Loireau-Lozac'h, A.M, Dexpert, H, Lagarde, P, Flahaut, J

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p-Type a-Si:H/ZnO:Al and μc-Si:H/ZnO:Al Thin-Film Solar Cell Structures-A Comparative Hard X-Ray Photoelectron Spectroscopy Study by Gerlach, D., Wippler, D., Wilks, R. G., Wimmer, M., Lozac'h, M., Felix, R., Ueda, S., Yoshikawa, H., Lips, K., Rech, B., Sumiya, M., Kobayashi, K., Gorgoi, M., Hupkes, J., Bar, M.

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Short and Medium Range Order in Ga–Ge–S Glasses: An X-Ray Absorption Spectroscopy Study at Room and Low Temperatures by Loireau-Lozac'h, A.M., Keller-Besrest, F., Bénazeth, S.

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Silicon-Tin Alloyed Nanocrystals by Femtosecond Laser Plasma by Svrcek, Vladimir, Buerkle, Marius, Lozach, Mickael, McDonald, Calum, Mariotti, Davide

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Electrical conductivity of Ag2S-Ga2S3-GeS2 glasses by CHBANI, N, FERHAT, A, LOIREAU-LOZAC'H, A.-M, DUGUE, J

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Raman and infrared spectroscopic studies of GeGaAg sulphide glasses by Julien, C., Barnier, S., Massot, M., Chbani, N., Cai, X., Loireau-Lozac'h, A.M., Guittard, M.

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Racemic Phase of Diaquabis(5-oxoprolinato)zinc(II) by Loireau-Lozach, A. M., Céolin, R., Solans, X., Font-Bardia, M.

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Système pseudo-ternaire Ag2S-Ga2S3-GeS2: diagramme de phases-domaine vitreux by CHBANI, N, LOIREAU-LOZAC'H, A.-M, RIVET, J, DUGUE, J

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Description du système ternaire Ag-Ga-Te by Guittard, M., Rivet, J., Alapini, F., Chilouet, A., Loireau-Lozac'h, A.-M.

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Ternaire argent-germanium-sulfure. Quasibinaire disulfure de germanium : sulfure d'argent. Conductive electrique du verre le plus riche en argent by CHBANI, N, CAI, X, LOIREAU-LOZAC'H, A. M, GUITTARD, M

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Atomic background in 4 p elements by Padežnik-Gomilšek, J., Kodre, A., Arčon, I., Loireau-Lozac'h, A.-M., Bénazeth, S.

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Etudes des verres du pseudo-ternaire La2S3-Bi2S3-Ga2S3, en relation avec le diagramme de phases et la spectroscopie infra-rouge by ECREPONT, C, GUITTARD, M, BARNIER, S, LOIREAU-LOZAC'H, A. M, PALAZZI, M, JULIEN, C, MASSOT, M

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Ternaire argent-germanium-sulfure. Quasibinaire disulfure de germanium - sulfure d'argent. Conductivite electrique du verre le plus riche en argent by Chbani, N, Cai, X, Loireau-Lozac'h, A.M, Guittard, M

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Diagramme de phase du système Ga2Se3-CdSe by LOIREAU-LOZAC'H, A. M, GUITTARD, M, FLAHAUT, J

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