Etching of 6H-SiC and 4H-SiC using NF3 in a reactive ion etching system by CASADY, J. B, LUCKOWSKI, E. D, BOZACK, M, SHERIDAN, D, JOHNSON, R. W, WILLIAMS, J. R

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Improved ohmic contact to n-type 4H and 6H-SiC using nichrome by Luckowski, E. D., Delucca, J. M., Williams, J. R., Mohney, S. E., Bozack, M. J., Isaacs-Smith, T., Crofton, J.

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Titanium and aluminum-titanium ohmic contacts to p-type SiC by Crofton, J., Beyer, L., Williams, J.R., Luckowski, E.D., Mohney, S.E., Delucca, J.M.

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Etching of 6H‐SiC and 4H‐SiC using  NF 3 in a Reactive Ion Etching System by Casady, J. B., Luckowski, E. D., Bozack, M., Sheridan, D., Johnson, R. W., Williams, J. R.

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Fabrication procedures and characterization of 6H-SiC MESFETs for use in high temperature electronics by Casady, J.B., Luckowski, E.D., Johnson, R.W., Crofton, J., Williams, J.R.

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Improved ohmic contact to n-type 4H and 6H-SiC using nichrome : III-V nitrides and silicon carbide by LUCKOWSKI, E. D, DELUCCA, J. M, WILLIAMS, J. R, MOHNEY, S. E, BOZACK, M. J, ISAACS-SMITH, T, CROFTON, J

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High temperature ohmic contacts to p-type SiC by Crofton, J., Beyer, L., Hogue, T., Siergiej, R.R., Mani, S., Casady, J.B., Oder, T.N., Williams, J.R., Luckowski, E.D., Isaacs-Smith, T., Iyer, V.R., Mohney, S.E.

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Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity by Skromme, B. J., Luckowski, E., Moore, K., Bhatnagar, M., Weitzel, C. E., Gehoski, T., Ganser, D.

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Oxygen vacancy defects in tantalum pentoxide: a density functional study by Ramprasad, R., Sadd, Michael, Roberts, Doug, Remmel, Tom, Raymond, Mark, Luckowski, Eric, Kalpat, Sriram, Barron, Carole, Miller, Mel

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Challenges for the integration of metal gate electrodes by Schaeffer, J.K., Capasso, C., Fonseca, L.R.C., Samavedam, S., Gilmer, D.C., Liang, Y., Kalpat, S., Adetutu, B., Tseng, H.-H., Shiho, Y., Demkov, A., Hegde, R., Taylor, W.J., Gregory, R., Jiang, J., Luckowski, E., Raymond, M.V., Moore, K., Triyoso, D., Roan, D., White Jr, B.E., Tobin, P.J.

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Dual-metal gate CMOS with HfO2 gate dielectric by Samavedam, S.B., La, L.B., Smith, J., Dakshina-Murthy, S., Luckowski, E., Schaeffer, J., Zavala, M., Martin, R., Dhandapani, V., Triyoso, D., Tseng, H.H., Tobin, P.J., Gilmer, D.C., Hobbs, C., Taylor, W.J., Grant, J.M., Hegde, R.I., Mogab, J., Thomas, C., Abramowitz, P., Moosa, M., Conner, J., Jiang, J., Arunachalarn, V., Sadd, M., Nguyen, B.-Y., White, B.

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Gate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gate by Henson, K., Bu, H., Na, M.H., Liang, Y., Kwon, U., Krishnan, S., Schaeffer, J., Jha, R., Moumen, N., Carter, R., DeWan, C., Donaton, R., Guo, D., Hargrove, M., He, W., Mo, R., Ramachandran, R., Ramani, K., Schonenberg, K., Tsang, Y., Wang, X., Gribelyuk, M., Yan, W., Shepard, J., Cartier, E., Frank, M., Harley, E., Arndt, R., Knarr, R., Bailey, T., Zhang, B., Wong, K., Graves-Abe, T., Luckowski, E., Park, D.-G., Narayanan, V., Chudzik, M., Khare, M.

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Application of on-chip MIM decoupling capacitor for 90nm SOI microprocessor by Roberts, D., Johnstone, W., Sanchez, H., Mandhana, O., Spilo, D., Hayden, J., Travis, E., Melnick, B., Celik, M., Byoung Woon Min, Edgerton, J., Raymond, M., Luckowski, E., Happ, C., Martinez, A., Wilson, B., Pak Leung, Garnett, T., Goedeke, D., Remmel, T., Ramakrishna, K., White, B.E.

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Single Metal Gate on High-k Gate Stacks for 45nm Low Power CMOS by Taylor, W.J., Capasso, C., Min, B., Winstead, B., Verret, E., Loiko, K., Gilmer, D., Hegde, R.I., Schaeffer, J., Luckowski, E., Martinez, A., Raymond, M., Happ, C., Triyoso, D.H., Kalpat, S., Haggag, A., Roan, D., Nguyen, J.-Y., La, L. B., Hebert, L., Smith, J., Jovanovic, D., Burnett, D., Foisy, M., Cave, N., Tobin, P.J., Samavedam, S.B., White, B.E., Venkatesan, S.

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Microstructure modified HfO/sub 2/ using Zr addition with Ta/sub x/ C/sub y/ gate for improved device performance and reliability by Hegde, R.I., Triyoso, D.H., Tobin, P.J., Kalpat, S., Ramon, M.E., Tseng, H.-H., Schaeffer, J.K., Luckowski, E., Taylor, W.J., Capasso, C.C., Gilmer, D.C., Moosa, M., Haggag, A., Raymond, M., Roan, D., Nguyen, J., La, L.B., Hebert, E., Cotton, R., Wang, X.-D., Zollner, S., Gregory, R., Werho, D., Rai, R.S., Fonseca, L., Stoker, M., Tracy, C., Chan, B.W., Chiu, Y.H., White, B.E.

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Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/ stack by Tseng, H.-H., Capasso, C.C., Schaeffer, J.K., Hebert, E.A., Tobin, P.J., Gilmer, D.C., Triyoso, D., Ramon, M.E., Kalpat, S., Luckowski, E., Taylor, W.J., Jeon, Y., Adetutu, O., Hegde, R.I., Noble, R., Jahanbani, M., El Chemali, C., White, B.E.

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Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO2stack by TSENG, H.-H, CAPASSO, C. C, TAYLOR, W. J, JEON, Y, ADETUTU, O, HEGDE, R. I, NOBLE, R, JAHANBANI, M, EL CHEMALI, C, WHITE, B. E, SCHAEFFER, J. K, HEBERT, E. A, TOBIN, P. J, GILMER, D. C, TRIYOSO, D, RAMON, M. E, KALPAT, S, LUCKOWSKI, E

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Metal gate MOSFETs with HfO2 gate dielectric by SAMAVEDAM, S. B, TSENG, H. H, NGUYEN, B.-Y, HEBERT, L, ADETUTU, O, DHANDAPANI, V, LUO, T-Y, GARCIA, R, ABRAMOWITZ, P, MOOSA, M, GILMER, D. C, HOBBS, C, TOBIN, P. J, TAYLOR, W. J, GRANT, J. M, HEGDE, R, BAGCHI, S, LUCKOWSKI, E, ARUNACHALAM, V, AZRAK, M, MOGAB, J, DAKSHINA-MURTHY, S, LA, L. B, SMITH, J, SCHAEFFER, J, ZAVALA, M, MARTIN, R

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Defect passivation with fluorine in a Ta/sub x/C/ high-K gate stack for enhanced device threshold voltage stability and performance by Tseng, H.-H., Tobin, P.J., Hebert, E.A., Kalpat, S., Ramon, M.E., Fonseca, L., Jiang, Z.X., Schaeffer, J.K., Hegde, R.I., Triyoso, D.H., Gilmer, D.C., Taylor, W.J., Capasso, C.C., Adetutu, O., Sing, D., Conner, J., Luckowski, E., Chan, B.W., Haggag, A., Backer, S., Noble, R., Jahanbani, M., Chili, Y.H., White, B.E.

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Fermi level pinning with sub-monolayer MeOx and metal gates [MOSFETs] by Samavedam, S.B., La, L.B., Tobin, P.J., White, B., Hobbs, C., Fonseca, L.R.C., Demkov, A.A., Schaeffer, J., Luckowski, E., Martinez, A., Raymond, M., Triyoso, D., Roan, D., Dhandapani, V., Garcia, R., Anderson, S.G.H., Moore, K., Tseng, H.H., Capasso, C., Adetutu, O., Gilmer, D.C., Taylor, W.J., Hegde, R., Grant, J.

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