Innovative scheme for selective carbon nanotubes integration in via structures by Fayolle, M., Pontcharra, J., Dijon, J., Fournier, A., Okuno, H., Quesnel, E., Muffato, V., Jayet, C., Lugand, J.F., Gautier, P., Vandroux, L., Huet, S., Grampeix, H., Yckache, K., Mariolle, D., Billon, T.

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Through Silicon Via technology using tungsten metallization by Pares, G, Bresson, N, Minoret, S, Lapras, V, Brianceau, P, Lugand, J F, Anciant, R, Sillon, N

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Full CMP integration of CVD TiN damascene sub-0.1-μm metal gate devices for ULSI applications by Ducroquet, F., Achard, H., Coudert, F., Previtali, B., Lugand, J.-F., Ulmer, L., Farjot, T., Gobil, Y., Heitzmann, M., Tedesco, S., Nier, M.E., Deleonibus, S.

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Full CMP integration of CVD TiN damascene sub-0.1-mum metal gate devices for ULSI applications by Ducroquet, F, Achard, H, Coudert, F, Previtali, B, Lugand, J-F, Ulmer, L, Farjot, T, Gobil, Y, Heitzmann, M, Tedesco, S, Nier, M E, Deleonibus, S

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Full CMP integration of CVD TiN damascene sub-0.1-[mu]m metal gate devices for ULSI applications by Ducroquet, F, Achard, H, Coudert, F, Previtali, B, Lugand, J.-F, Ulmer, L, Farjot, T, Gobil, Y, Heitzmann, M, Tedesco, S, Nier, M.E, Deleonibus, S

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Full CMP integration of CVD TiN damascene sub-0.1-/spl mu/m metal gate devices for ULSI applications by Ducroquet, F., Achard, H., Coudert, F., Previtali, B., Lugand, J.-F., Ulmer, L., Farjot, T., Gobil, Y., Heitzmann, M., Tedesco, S., Nier, M.E., Deleonibus, S.

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Integration of dense CNTs in vias on 200mm diameter wafers: Study of post CNT growth processes by Fayolle, M., Lugand, J. F., Kachtouli, R., Okuno, H., Dijon, J., Gautier, P., Billon, T.

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Mid-process through silicon vias technology using tungsten metallization: Process optimazation and electrical results by Pares, G., Minoret, S., Lugand, J.F., Huet, S., Lapras, V., Anciant, R., Henry, D., Sillon, N., Dunne, B.

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Full CMP Integration of TiN Damascene Metal Gate Devices by Achard, H., Ducroquet, F., Coudert, F., Previtali, B., Lugand, J.F., Ulmer, L., Farjot, T., Gobil, Y., Heitzmann, M., Tedesco, S., Nier, M.E., Deleonibus, S.

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Copper-SiOC-AirGap integration in a double level metal interconnect by Demolliens, O., Morand, Y., Fayolle, M., Cochet, M., Assous, M., Feldis, H., Lonis, D., Royer, J.C., Gobil, Y., Passemard, G., Maury, P., Jourdan, F., Cordeau, M., Morel, T., Perroud, L., Ulmer, L., Lugard, J.F., Renaud, D.

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