Search Results - Lundina, E Y

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  1. 1
    Barrier height modification and mechanism of carrier transport in Ni/in situ grown Si3N4/n-GaN Schottky contacts

    Barrier height modification and mechanism of carrier transport in Ni/in situ grown Si3N4/n-GaN Schottky contacts by Karpov, S Y, Zakheim, D A, Lundin, W V, Sakharov, A V, Zavarin, E E, Brunkov, P N, Lundina, E Y, Tsatsulnikov, A F

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  2. 2
    Barrier height modification and mechanism of carrier transport in Ni/ in situ grown Si 3 N 4 /n-GaN Schottky contacts

    Barrier height modification and mechanism of carrier transport in Ni/ in situ grown Si 3 N 4 /n-GaN Schottky contacts by Karpov, S Y, Zakheim, D A, Lundin, W V, Sakharov, A V, Zavarin, E E, Brunkov, P N, Lundina, E Y, Tsatsulnikov, A F

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  3. 3
    Long-term stability of long-wavelength (>1.25 µm) quantum-dot lasers fabricated on GaAs substrates

    Long-term stability of long-wavelength (>1.25 µm) quantum-dot lasers fabricated on GaAs substrates by Lundina, E. Yu, Shernyakov, Yu. M., Maksimov, M. V., Kayander, I. N., Tsatsul’nikov, A. F., Ledentsov, N. N., Zhukov, A. E., Maleev, N. A., Mikhrin, S. S., Ustinov, V. M., Alferov, Zh. I., Bimberg, D.

    Published in Technical physics
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  4. 4
    Dependence of leakage current in Ni/Si3N4/n-GaN Schottky diodes on deposition conditions of silicon nitride

    Dependence of leakage current in Ni/Si3N4/n-GaN Schottky diodes on deposition conditions of silicon nitride by Zakheim, Dmitry A, Lundin, Wsevolod V, Sakharov, Alexey V, Zavarin, Eugene E, Brunkov, Pavel N, Lundina, Elena Y, Tsatsulnikov, Andrey F, Karpov, Sergey Yu

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  5. 5
    Dependence of leakage current in Ni/Si 3 N 4 /n-GaN Schottky diodes on deposition conditions of silicon nitride

    Dependence of leakage current in Ni/Si 3 N 4 /n-GaN Schottky diodes on deposition conditions of silicon nitride by Zakheim, Dmitry A, Lundin, Wsevolod V, Sakharov, Alexey V, Zavarin, Eugene E, Brunkov, Pavel N, Lundina, Elena Y, Tsatsulnikov, Andrey F, Karpov, Sergey Yu

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