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Dependence of leakage current in Ni/Si3N4/n-GaN Schottky diodes on deposition conditions of silicon nitride
by
Zakheim, Dmitry A
,
Lundin, Wsevolod V
,
Sakharov, Alexey V
,
Zavarin, Eugene E
,
Brunkov, Pavel N
,
Lundina, Elena Y
,
Tsatsulnikov, Andrey F
,
Karpov, Sergey Yu
Published in
Semiconductor science and technology
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Dependence of leakage current in Ni/Si 3 N 4 /n-GaN Schottky diodes on deposition conditions of silicon nitride
by
Zakheim, Dmitry A
,
Lundin, Wsevolod V
,
Sakharov, Alexey V
,
Zavarin, Eugene E
,
Brunkov, Pavel N
,
Lundina, Elena Y
,
Tsatsulnikov, Andrey F
,
Karpov, Sergey Yu
Published in
Semiconductor science and technology
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Semiconductor Science And Technology
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Subjects
Deposition Conditions
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Engineering
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Engineering, Electrical & Electronic
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Gan
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Leakage Current
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Materials Science
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Materials Science, Multidisciplinary
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Mis Schottky Diodes
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Physical Sciences
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Physics
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Physics, Condensed Matter
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Point Defects
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Science & Technology
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Silicon Nitride
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Technology
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Institute Of Physics
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Institute Of Physics Iopscience Extra
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