Characterization of a Silicon IGBT and Silicon Carbide MOSFET Cross-Switch Hybrid by Rahimo, Munaf, Canales, Francisco, Minamisawa, Renato Amaral, Papadopoulos, Charalampos, Vemulapati, Umamaheswara, Mihaila, Andrei, Kicin, Slavo, Drofenik, Uwe

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Phosphorus‐Related Complexes and Shallow Doping in Diamond by Alfieri, Giovanni, Kranz, Lukas, Mihaila, Andrei

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Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes by Hazdra, Pavel, Smrkovsky, Petr, Vobecky, Jan, Mihaila, Andrei

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Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3 by Ingebrigtsen, M. E., Kuznetsov, A. Yu, Svensson, B. G., Alfieri, G., Mihaila, A., Badstübner, U., Perron, A., Vines, L., Varley, J. B.

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Generation and metastability of deep level states in β-Ga2O3 exposed to reverse bias at elevated temperatures by Ingebrigtsen, M. E., Kuznetsov, A. Yu, Svensson, B. G., Alfieri, G., Mihaila, A., Vines, L.

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Power Cycling Test on 3.3kV SiC MOSFETs and the Effects of Bipolar Degradation on the Temperature Estimation by VSD-Method by Hoffmann, Felix, Soler, Victor, Mihaila, Andrei, Kaminski, Nando

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High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide by Soler, Victor, Cabello, Maria, Berthou, Maxime, Montserrat, Josep, Rebollo, Jose, Godignon, Philippe, Mihaila, Andrei, Rogina, Maria R., Rodriguez, Alberto, Sebastian, Javier

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Bulk β-Ga2O3 with (010) and (201) surface orientation: Schottky contacts and point defects by Ingebrigtsen, Mads Eide, Vines, Lasse, Alfieri, G, Mihaila, A, Badstübner, U, Svensson, Bengt Gunnar, Kuznetsov, Andrej

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Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs by Cabello, Maria, Soler, Victor, Knoll, Lars, Montserrat, Josep, Rebollo, Jose, Mihaila, Andrei, Godignon, Philippe

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Superjunction IGBT Filling the Gap Between SJ MOSFET and Ultrafast IGBT by Bauer, F., Nistor, I., Mihaila, A., Antoniou, M., Udrea, F.

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Reliability and Robustness Tests for Next-Generation High-Voltage SiC MOSFETs by Soler, Victor, Cabello, Maria, Banu, Viorel, Jorda, Xavier, Montserrat, Josep, Rebollo, Jose, Rogina, Maria R., Mihaila, Andrei, Godignon, Philippe

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Study of 1.2kV High-k SiC Power MOSFETS Under Harsh Repetitive Switching Conditions by Wirths, Stephan, Mihaila, Andrei, Romano, Gianpaolo, Schneider, Nick, Ceccarelli, Edoardo, Alfieri, Giovanni, Arango, Yulieth, Knoll, Lars

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Single and repetitive surge current events of 3.3 kV-20 A 4H-SiC JBS rectifiers: the impact of the anode layout by Donato, Nazareno, Udrea, Florin, Mihaila, Andrei, Knoll, Lara, Romano, Gianpaolo, Kranz, Lukas, Antoniou, Marina

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Long term high temperature reverse bias (HTRB) test on high voltage SiC-JBS-diodes by Hoffmann, Felix, Mihaila, Andrei, Kranz, Lukas, Godignon, Philippe, Kaminski, Nando

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Planar edge terminations for high voltage 4H-SiC power MOSFETs by Soler, Victor, Berthou, Maxime, Mihaila, Andrei, Monserrat, Josep, Godignon, Philippe, Rebollo, José, Millán, José

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Gate Impedance Analysis of SiC power MOSFETs with SiO2 and High-k Dielectric by Race, Salvatore, Kumar, Piyush, Natzke, Philipp, Kovacevic-Badstuebner, Ivana, Bathen, Marianne Etzelmuller, Grossner, Ulrike, Romano, Gianpaolo, Arango, Yulieth, Bolat, Sami, Wirths, Stephan, Knoll, Lars, Mihaila, Andrei

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Vertical Power SiC MOSFETs with High-k Gate Dielectrics and Superior Threshold Voltage Stability by Wirths, Stephan, Arango, Yulieth, Mihaila, Andrei, Bellini, Marco, Romano, Gianpaolo, Alfieri, Giovanni, Belanche, Manuel, Knoll, Lars, Bianda, Enea, Mengotti, Elena

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Development of a 60μm Deep Trench and Refill Process for Manufacturing Si-Based High-Voltage Super-Junction Structures by BARTOLF, Holger, MIHAILA, Andrei, NISTOR, Iulian, JURISCH, Michael, LEIBOLD, Bernd, ZIMMERMANN, Martin

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Vertical 1.2kV SiC Power MOSFETs with High-k/Metal Gate Stack by Wirths, Stephan, Arango, Yulieth Christina, Prasmusinto, Alyssa, Alfieri, Giovanni, Bianda, Enea, Mihaila, Andrei, Kranz, Lukas, Bellini, Marco, Knoll, Lars

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Passivation in High-Power Si Devices - An Overview by Grossner, Ulrike, Mihaila, Andrei, Vemulapati, Umamaheswara

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