Search Results - MOERKIRK, R. P

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  1. 1
    Photoreflectance study of surface Fermi level in GaAs and GaAlAs

    Photoreflectance study of surface Fermi level in GaAs and GaAlAs by SHEN, H, DUTTA, M, FOTIADIS, L, NEWMAN, P. G, MOERKIRK, R. P, CHANG, W. H, SACKS, R. N

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  2. 2
    Annealing effects on heavily carbon-doped GaAs

    Annealing effects on heavily carbon-doped GaAs by HAN, W. Y, LU, Y, LEE, H. S, COLE, M. W, SCHAUER, S. N, MOERKIRK, R. P, JONES, K. A, YANG, L. W

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  3. 3
    The microstructure and electrical properties of nonalloyed epitaxial Au-Ge ohmic contacts to n-GaAs

    The microstructure and electrical properties of nonalloyed epitaxial Au-Ge ohmic contacts to n-GaAs by LEE, H. S, COLE, M. W, VAVRA, W, CLARKE, R, LAREAU, R. T, SCHAUER, S. N, FOX, D. C, ECKART, D. W, MOERKIRK, R. P, CHANG, W. H, JONES, K. A, ELAGOZ, S

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  4. 4
    Effects of annealing conditions on heavily carbon-doped InGaAs

    Effects of annealing conditions on heavily carbon-doped InGaAs by HAN, W. Y, CALDERON, L, LU, Y, SCHAUER, S. N, MOERKIRK, R. P, LEE, H. S, FLEMISH, J. R, JONES, K. A, YANG, L. W

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  5. 5
    Broad-bandwidth, high-responsivity intermediate growth temperature GaAs MSM photodetectors

    Broad-bandwidth, high-responsivity intermediate growth temperature GaAs MSM photodetectors by Tousley, B.C., Davids, N., Sayles, A.H., Paolella, A., Cooke, P., Lemoune, M.L., Moerkirk, R.P., Nabet, B.

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  6. 6
    Application of superlattice bandpass filters in 10 μm infrared detection

    Application of superlattice bandpass filters in 10 μm infrared detection by Choi, K. K., Dutta, M., Moerkirk, R. P., Kuan, C. H., Iafrate, G. J.

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  7. 7
    Application of superlattice bandpass filters in 10 micron infrared detection

    Application of superlattice bandpass filters in 10 micron infrared detection by Choi, K K, Dutta, M, MOERKIRK, R P, Kuan, C H, Iafrate, G J

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  8. 8
    Intermediate temperature molecular beam-epitaxy growth for design of large-area metal-semiconductor-metal photodetectors

    Intermediate temperature molecular beam-epitaxy growth for design of large-area metal-semiconductor-metal photodetectors by Nabet, Bahram, Paolella, Arthur, Cooke, Paul, Lemuene, Mary L., Moerkirk, Robert P., Liou, Liann-Chern

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  9. 9
    A novel technique for the study of defects using quantum wires

    A novel technique for the study of defects using quantum wires by Smith, Doran D., Wybourne, Martin, Wu, J.C., DeAnni, A., LeMeune, Mary-Lloyd, Moerkirk, Robert P., Chang, Wayne H., Fotiadis, Lemonia

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  10. 10
    Back-gating effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor

    Back-gating effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor by Folkes, P. A., Smith, Doran, Lux, R. A., Zhou, W., Thompson, R., Moerkirk, R., Lemeune, M., Cooke, P., Brown, K.

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  11. 11
    Direct measurement of piezoelectric field in a [111]B grown InGaAs/GaAs heterostructure by Franz-Keldysh oscillations

    Direct measurement of piezoelectric field in a [111]B grown InGaAs/GaAs heterostructure by Franz-Keldysh oscillations by SHEN, H, DUTTA, M, CHANG, W, MOERKIRK, R, KIM, D. M, CHUNG, K. W, RUDEN, P. P, NATHAN, M. I, STROSCIO, M. A

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  12. 12
    Variation Of Growth Temperature For Improved Dynamic Range GaAs Metal-semiconductor-metal (MSM) Photodetectors

    Variation Of Growth Temperature For Improved Dynamic Range GaAs Metal-semiconductor-metal (MSM) Photodetectors by Cooke, P., Nabet, B., Paolella, A., Lemeune, M., Moerkirk, R.

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