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Exploring High-Temperature Reliability of 4H-SiC MOSFETs : A Comparative Study of High-K Gate Dielectric Materials
by
M. V. Ganeswara Rao
,
N. Ramanjaneyulu
,
Sumalatha Madugula
,
N. P. Dharani
,
K. Rajesh Babu
,
Kallepelli Sagar
Published in
Transactions on electrical and electronic materials
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RETRACTED ARTICLE: Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials
by
Ganeswara Rao, M. V.
,
Ramanjaneyulu, N.
,
Madugula, Sumalatha
,
Dharani, N. P.
,
Rajesh Babu, K.
,
Sagar, Kallepelli
Published in
Transactions on electrical and electronic materials
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Retraction Note: Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials
by
Ganeswara Rao, M. V.
,
Ramanjaneyulu, N.
,
Madugula, Sumalatha
,
Dharani, N. P.
,
Rajesh Babu, K.
,
Sagar, Kallepelli
Published in
Transactions on electrical and electronic materials
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Article
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