Search Results - Mahalingam, Anbu Selvam

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  1. 1
    Trench first metal hardmask post-lithography novel rework process for defectivity and yield improvement

    Trench first metal hardmask post-lithography novel rework process for defectivity and yield improvement by Silvestre, Mary Claire, Gogna, Mukesh, Mahalingam, Anbu Selvam K. M., Ramanathan, Eswar, Ordonio, Christopher, Schaller, John

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  2. 2
    Metal wiring critical dimension shrink using ALD spacer in BEOL sub-50nm pitch

    Metal wiring critical dimension shrink using ALD spacer in BEOL sub-50nm pitch by Shah, Ketan, Periasamy, Prakash, Chandrasekhar, Ashwini, Mahalingam, Anbu Selvam K. M., Pal, Shyam, Ordonio, Christopher, Welti, Peter, Chun Hui Low, Child, Craig

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  3. 3
    Optimization of wet clean and its impact on sub-50 nm pitch BEOL yield

    Optimization of wet clean and its impact on sub-50 nm pitch BEOL yield by Islam, A K M Sajjadul, Periasamy, Prakash, Chandrasekhar, Ashwini, Mahalingam, Anbu Selvam K M, Witt, Christian, Child, Craig

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  4. 4
    Hammer test to detect BEOL process marginalities on via chains in advanced nodes

    Hammer test to detect BEOL process marginalities on via chains in advanced nodes by Mahalingam, Anbu Selvam Km, Silvestre, Mary Claire, Ramanathan, Eswar, Ordonio, Christopher, Schaller, John

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  5. 5
    Optimizing Cu barrier thickness for interconnects performance, reliability and yield

    Optimizing Cu barrier thickness for interconnects performance, reliability and yield by Tian Shen, Rajagopalan, Balajee, Silvestre, Mary Claire, Ramanathan, Eswar, Mahalingam, Anbu Selvam K. M., Wenyi Zhang, Kong Boon Yeap, Justison, Patrick

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  6. 6
    Effect of top corner rounding in BEOL to yield in advanced technologies

    Effect of top corner rounding in BEOL to yield in advanced technologies by Ramanathan, Eswar, Silvestre, Mary Claire, Mahalingam, Anbu Selvam Km, Garg, Niti, Siddhartha, Siddhartha, Ordonio, Christopher, Schaller, John

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  7. 7
    Vertical natural capacitor time dependent dielectric breakdown (TDDB) improvement in 28nm

    Vertical natural capacitor time dependent dielectric breakdown (TDDB) improvement in 28nm by Silvestre, Mary Claire, Wenyi, Zhang Galor, Selvam, Km Mahalingam Anbu, Ramanathan, Eswar, Ordonio, Christopher, Schaller, John, Lee Jong Hyup, Capasso, Cristiano, Justison, Patrick

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  8. 8
    Cu seed optimization for minimum pitch wiring in 10nm and beyond

    Cu seed optimization for minimum pitch wiring in 10nm and beyond by da Silva, Adam, Periasamy, Prakash, Sarad, Jeric, Mahalingam, Anbu Selvam, Liew, San Leong, Child, Craig

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  9. 9
    10nm local interconnect challenge with iso-dense loading and improvement with ALD spacer process

    10nm local interconnect challenge with iso-dense loading and improvement with ALD spacer process by Ming He, Ordonio, Christopher, Chun Hui Low, Welti, Peter, Lobb, Granger, Clancy, Aleksandra, Shu, Jeff, Hamouda, Ayman, Stephens, Jason, Shah, Ketan, Chandrasekhar, Ashwini, Silvestre, Mary Claire, Periasamy, Prakash, Mahalingam, Anbu Selvam Km, Pal, Shyam, Child, Craig

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  10. 10
    Nested interconnect macro electrical yield improvement for advanced triple patterning integration

    Nested interconnect macro electrical yield improvement for advanced triple patterning integration by Silvestre, Mary Claire, He, Ming, Mahalingam, Anbu Selvam K M, Child, Craig, Roux, Alycia, Low, Chun Hui, Fisher, Daniel, Zhou, Yue, Park, DeNeil, Karakoy, Mert

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  11. 11
    Defect improvement by optimizing electroplating in BEOL sub-50nm pitch

    Defect improvement by optimizing electroplating in BEOL sub-50nm pitch by Ahmed, Shafaat, Shah, Ketan, Cheng, Tien-Jen, da Silva, Adam, Sharma, Mukta, Lin, Teng-Yin, Koli, Dinesh, Mahalingam, Anbu Selvam K M, Grunow, Stephan, Child, Craig

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  12. 12
    Extra-pattern killer defectivity improvement and enhancement of within-feature barrier coverage by optimization of TaN barrier PVD process in 90p Cu wire interconnects for 28nm technology

    Extra-pattern killer defectivity improvement and enhancement of within-feature barrier coverage by optimization of TaN barrier PVD process in 90p Cu wire interconnects for 28nm tec... by Rajagopalan, Balajee, Laloe, Jean-Baptiste, Silvestre, Mary Claire, Ramanathan, Eswar, Khanal, Sohana, Laval, Alain, Ge, Qian, Takahashi, Nobuyuki, Mahalingam, Anbu Selvam, Liew, San Leong, Teagle, Robert

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