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    Temperature analysis of Si0.55Ge0.45 sourced nanowire tunnel field-effect transistor based on charge plasma and gate stack

    Temperature analysis of Si0.55Ge0.45 sourced nanowire tunnel field-effect transistor based on charge plasma and gate stack by Mahto, Chetlal, Sharma, Prithvi Raj, Nishad, Siddharth Kumar, Kumar, Shubham, Singh, Navaneet Kumar, Singh, Shradhya, Kar, Rajib, Mandal, Durbadal

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