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AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers
by
Li, Jian
,
Maidebura, Yan
,
Zhang, Yang
,
Wu, Gang
,
Su, Yanmei
,
Zhuravlev, Konstantin
,
Wei, Xin
Published in
Crystals (Basel)
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Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy
by
Malin, Timur
,
Maidebura, Yan
,
Mansurov, Vladimir
,
Gavrilova, Tatyana
,
Gutakovsky, Anton
,
Vdovin, Vladimir
,
Ponomarev, Sergey
,
Loshkarev, Ivan
,
Osinnykh, Igor
,
Volodin, Vladimir
,
Milakhin, Denis
,
Zhuravlev, Konstantin
Published in
Thin solid films
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Tackling residual tensile stress in AlN-on-Si nucleation layers via the controlled Si(111) surface nitridation
by
Milakhin, Denis
,
Malin, Timur
,
Mansurov, Vladimir
,
Maidebura, Yan
,
Bashkatov, Dmitriy
,
Milekhin, Ilya
,
Goryainov, Sergey
,
Volodin, Vladimir
,
Loshkarev, Ivan
,
Vdovin, Vladimir
,
Gutakovskii, Anton
,
Ponomarev, Sergei
,
Zhuravlev, Konstantin
Published in
Surfaces and interfaces
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