Search Results - Malladi, Ramana M.

  • Showing 1 - 9 results of 9
Refine Results
  1. 1
    A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs

    A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs by Qingqing Liang, Cressler, J.D., Guofu Niu, Yuan Lu, Freeman, G., Ahlgren, D.C., Malladi, R.M., Newton, K., Harame, D.L.

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  2. 2
    Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications

    Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications by Joseph, A J, Gillis, J D, Doherty, M, Lindgren, P J, Previti-Kelly, R A, Malladi, R M, Wang, P-C, Erturk, M, Ding, H, Gebreselasie, E G, McPartlin, M J, Dunn, J

    Get full text
    Items that cite this one
    Article
    Save to List
    Saved in:
  3. 3
    3D Integration Techniques Applied to SiGe Power Amplifiers

    3D Integration Techniques Applied to SiGe Power Amplifiers by Malladi, Ramana M., Joseph, Alvin, Lindgren, Peter, Ni, Wan, Wang, Dawn, Ding, Hanyi, Erturk, Mete, Previti-Kelly, Rosemary

    Get full text
    Items that cite this one
    Conference Proceeding
    Save to List
    Saved in:
  4. 4
    A physics-based high-injection transit-time model applied to barrier effects in SiGe HBTs

    A physics-based high-injection transit-time model applied to barrier effects in SiGe HBTs by Qingqing Liang, Cressler, J.D., Guofu Niu, Malladi, R.M., Newton, K., Harame, D.L.

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  5. 5
    Large Signal Modeling of High Efficiency SiGe HBTs for Power Amplifier Applications

    Large Signal Modeling of High Efficiency SiGe HBTs for Power Amplifier Applications by Malladi, R.M., McPartlin, M., Joseph, A., Lafontaine, H., Doherty, M.

    Request full text
    Conference Proceeding
    Save to List
    Saved in:
  6. 6
    Compact modeling of collector base junction space charge region transit time effect on noise in SiGe HBTs

    Compact modeling of collector base junction space charge region transit time effect on noise in SiGe HBTs by Ziyan Xu, Guofu Niu, Malladi, R.M.

    Request full text
    Conference Proceeding
    Save to List
    Saved in:
  7. 7
    A high-injection transit-time model for heterojunction barrier effects in SiGe HBTs

    A high-injection transit-time model for heterojunction barrier effects in SiGe HBTs by Qingqing Liang, Cressler, J.D., Guofu Niu, Malladi, R.M., Newton, K., Harame, D.L.

    Request full text
    Conference Proceeding
    Save to List
    Saved in:
  8. 8
    SiGe BiCMOS technologies for power amplifier applications

    SiGe BiCMOS technologies for power amplifier applications by Johnson, J.B., Joseph, A.J., Sheridan, D., Malladi, R.M.

    Request full text
    Conference Proceeding
    Save to List
    Saved in:
  9. 9
    Technology Computer-Aided Design (TCAD) Feasibility Study of Scaling SiGe HBTs

    Technology Computer-Aided Design (TCAD) Feasibility Study of Scaling SiGe HBTs by Camillo-Castillo, Renata, Stricker, Andreas, Johnson, Jeffrey B., Appaswarmy, Aravind, Malladi, Ramana, Joseph, Alvin, Harame, D.

    Get full text
    Conference Proceeding
    Save to List
    Saved in:

Search Tools: