500 °C Bipolar Integrated OR/NOR Gate in 4H-SiC by LANNI, Luigia, BENGT GUNNAR MALM, ÖSTLING, Mikael, ZETTERLING, Carl-Mikael

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A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology by Hedayati, Raheleh, Lanni, Luigia, Rodriguez, Saul, Malm, Bengt Gunnar, Rusu, Ana, Zetterling, Carl-Mikael

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Influence of Emitter Width and Emitter-Base Distance on the Current Gain in 4H-SiC Power BJTs by Buono, Benedetto, Ghandi, Reza, Domeij, Martin, Malm, Bengt Gunnar, Zetterling, Carl-Mikael, Östling, Mikael

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Grain structure influence on synchronized two-dimensional spin-Hall nano-oscillators by Capriata, Corrado Carlo Maria, Malm, Bengt Gunnar

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Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC by Lanni, Luigia, Ghandi, R., Malm, B. G., Zetterling, C., Ostling, M.

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Influence of Passivation Oxide Thickness and Device Layout on the Current Gain of SiC BJTs by Lanni, Luigia, Malm, Bengt Gunnar, Ostling, Mikael, Zetterling, Carl-Mikael

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Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications by Shakir, Muhammad, Hou, Shuoben, Hedayati, Raheleh, Malm, Bengt Gunnar, Östling, Mikael, Zetterling, Carl-Mikael

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Challenges for 10 nm MOSFET process integration by Östling, Mikael, Gunnar Malm, Bengt, Von Haartman, Martin, H ̊allstedt, Julius, Zhang, Zhen, Hellström, Per-Erik, Zhang, Shili

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Lateral p-n-p Transistors and Complementary SiC Bipolar Technology by Lanni, Luigia, Malm, Bengt Gunnar, Ostling, Mikael, Zetterling, Carl-Mikael

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Modeling and Characterization of Current Gain Versus Temperature in 4H-SiC Power BJTs by Buono, B., Ghandi, R., Domeij, M., Malm, B.G., Zetterling, C.-M., Ostling, M.

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A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C by Hou, Shuoben, Shakir, Muhammad, Hellstrom, Per-Erik, Malm, Bengt Gunnar, Zetterling, Carl-Mikael, Ostling, Mikael

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A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications by Hussain, Muhammad Waqar, Elahipanah, Hossein, Zumbro, John E., Rodriguez, Saul, Malm, Bengt Gunnar, Mantooth, Homer A., Rusu, Ana

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Effects of 3-MeV Protons on 4H-SiC Bipolar Devices and Integrated OR-NOR Gates by Suvanam, Sethu Saveda, Lanni, Luigia, Malm, Bengt Gunnar, Zetterling, Carl-Mikael, Hallén, Anders

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Modeling and Characterization of the on-Resistance in 4H-SiC Power BJTs by Buono, B, Ghandi, R, Domeij, M, Malm, B G, Zetterling, Carl-Mikael, Ostling, M

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A 600 degrees C TTL-Based 11-Stage Ring Oscillator in Bipolar Silicon Carbide Technology by Shakir, Muhammad, Hou, Shuoben, Malm, Bengt Gunnar, Östling, Mikael, Zetterling, Carl-Mikael

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High-Temperature Recessed Channel SiC CMOS Inverters and Ring Oscillators by Ekstrom, Mattias, Malm, Bengt Gunnar, Zetterling, Carl-Mikael

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A Monolithic, 500 degrees C Operational Amplifier in 4H-SiC Bipolar Technology by Hedayati, Raheleh, Lanni, Luigia, Rodriguez, Saul, Malm, Bengt Gunnar, Rusu, Ana, Zetterling, Carl-Mikael

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Impact of Random Grain Structure on Spin-Hall Nano-Oscillator Modal Stability by Capriata, Corrado Carlo Maria, Jiang, Sheng, Akerman, Johan, Malm, Bengt Gunnar

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500 degrees C Bipolar Integrated OR/NOR Gate in 4H-SiC by Lanni, Luigia, Malm, Bengt Gunnar, Östling, Mikael, Zetterling, Carl-Mikael

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A 600 °C TTL-Based 11-Stage Ring Oscillator in Bipolar Silicon Carbide Technology by Shakir, Muhammad, Hou, Shuoben, Malm, Bengt Gunnar, Ostling, Mikael, Zetterling, Carl-Mikael

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