Experimental and theoretical studies of phonons in hexagonal InN by Davydov, V. Yu, Emtsev, V. V., Goncharuk, I. N., Smirnov, A. N., Petrikov, V. D., Mamutin, V. V., Vekshin, V. A., Ivanov, S. V., Smirnov, M. B., Inushima, T.

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Ridge Waveguide Structure for Lattice-Matched Quantum Cascade Lasers by Mamutin, V. V., Ilyinskaya, N. D., Usikova, A. A., Lyutetskiy, A. V.

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On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers by Mamutin, V. V., Vasilyev, A. P., Lyutetskiy, A. V., Ilyinskaya, N. D., Zadiranov, Yu. M., Sofronov, A. N., Firsov, D. A., Vorobjev, L. E., Maleev, N. A., Ustinov, V. M.

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The Effect of Active Region Heating on Dynamic and Power Characteristics of Quantum Cascade Lasers Emitting at a Wavelength of 4.8 µm at Room Temperature by Dudelev, V. V., Mamutin, V. V., Chistyakov, D. V., Kognovitskaya, E. A., Kuchinskii, V. I., Maleev, N. A., Vasil’ev, A. P., Kuz’menkov, A. G., Ustinov, V. M., Sokolovskii, G. S.

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Investigation of the Modified Structure of a Quantum Cascade Laser by Mamutin, V. V., Maleev, N. A., Vasilyev, A. P., Ilyinskaya, N. D., Zadiranov, Yu. M., Usikova, A. A., Yagovkina, M. A., Shernyakov, Yu. M., Ustinov, V. M.

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Quantum-Cascade Lasers Generating at the 4.8-μm Wavelength at Room Temperature by Mamutin, V. V., Vasil’ev, A. P., Lyutetskii, A. V., Il’inskaya, N. D., Usikova, A. A., Zadiranov, Yu. M., Maleev, N. A., Sofronov, A. N., Firsov, D. A., Vorob’ev, L. E., Ustinov, V. M.

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Molecular beam epitaxy growth methods of wavelength control for InAs/(In)GaAsN/GaAs heterostructures by Mamutin, V V, Egorov, A Yu, Kryzhanovskaya, N V

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Molecular-beam epitaxy growth and characterization of 5-μm quantum cascade laser by Mamutin, V V, Ustinov, V M, Ilyinskaya, N D, Baydakova, M V, Ber, B Ya, Kasantsev, D Yu

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Methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures on GaAs substrates by Mamutin, V. V., Egorov, A. Yu, Kryzhanovskaya, N. V., Mikhrin, V. S., Nadtochy, A. M., Pirogov, E. V.

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Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures by Egorov, A.Yu, Odnobludov, V.A., Mamutin, V.V., Zhukov, A.E., Tsatsul’nikov, A.F., Kryzhanovskaya, N.V., Ustinov, V.M., Hong, Y.G., Tu, C.W.

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Physical properties of InN with the band gap energy of 1.1 eV by Inushima, T, Mamutin, V.V, Vekshin, V.A, Ivanov, S.V, Sakon, T, Motokawa, M, Ohoya, S

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Ion beam fabrication of metal/insulator/HT-superconductor nanostructures for field effect transistor by Mikoushkin, V.M., Mamutin, V.V., Sysoev, S.E., Shnitov, V.V., Gordeev, Yu.S.

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Study of postgrowth processing in the fabrication of quantum-cascade lasers by Mamutin, V. V., Ilyinskaya, N. D., Bedarev, D. A., Levin, R. V., Pushnyi, B. V.

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Emission characteristics improvement in structures with InAs/GaAsN/InGaAsN superlattices by Mamutin, V. V.

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MBE Growth of Hexagonal InN Films on Sapphire with Different Initial Growth Stages by Mamutin, V. V., Vekshin, V. A., Davydov, V. Yu, Ratnikov, V. V., Shubina, T. V., Ivanov, S. V., Kopev, P. S., Karlsteen, M., Söderwall, U., Willander, M.

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MBE growth and characterization of 5-μm quantum-cascade lasers by Mamutin, V. V., Ustinov, V. M., Boetthcher, J., Kuenzel, H.

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Growth mechanism of DyBa2Cu3Ox superconducting thin films grown by coevaporation molecular beam epitaxy at low temperatures and growth rates by MAMUTIN, V. V

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Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties by Mamutin, V.V., Shubina, T.V., Vekshin, V.A., Ratnikov, V.V., Toropov, A.A., Ivanov, S.V., Karlsteen, M., Södervall, U., Willander, M.

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Phonons in Hexagonal InN. Experiment and Theory by Davydov, V.Yu, Klochikhin, A.A., Smirnov, M.B., Emtsev, V.V., Petrikov, V.D., Abroyan, I.A., Titov, A.I., Goncharuk, I.N., Smirnov, A.N., Mamutin, V.V., Ivanov, S.V., Inushima, T.

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MBE growth of 5 μm quantum cascade lasers by Mamutin, V. V., Ustinov, V. M., Boetthcher, J., Kuenzel, H.

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