High spatial resolution grain orientation and strain mapping in thin films using polychromatic submicron x-ray diffraction by Tamura, N., MacDowell, A. A., Celestre, R. S., Padmore, H. A., Valek, B., Bravman, J. C., Spolenak, R., Brown, W. L., Marieb, T., Fujimoto, H., Batterman, B. W., Patel, J. R.

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Local plasticity of Al thin films as revealed by x-ray microdiffraction by Spolenak, R, Brown, W L, Tamura, N, MacDowell, A A, Celestre, R S, Padmore, H A, Valek, B, Bravman, J C, Marieb, T, Fujimoto, H, Batterman, B W, Patel, J R

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Electromigration lifetime and critical void volume by He, Jun, Suo, Z., Marieb, T. N., Maiz, J. A.

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Observations of electromigration induced void nucleation and growth in polycrystalline and near-bamboo passivated Al lines by Marieb, T., Flinn, P., Bravman, J. C., Gardner, D., Madden, M.

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Effects of dielectric materials on electromigration failure by Doan, J. C., Lee, S., Lee, S.-H., Flinn, P. A., Bravman, J. C., Marieb, T. N.

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Mechanical behaviour of submicron multilayers submitted to microtensile experiments by Ignat, M., Marieb, T., Fujimoto, H., Flinn, P.A.

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A high-voltage scanning electron microscopy system for in situ electromigration testing by Doan, J. C., Lee, S., Lee, S.-H., Meier, N. E., Bravman, J. C., Flinn, P. A., Marieb, T. N., Madden, M. C.

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Observation of voids induced by mechanical stress and electromigration in passivated Al lines deposited at different purity levels by Marieb, T., Bravman, J. C., Flinn, P., Gardner, D. S., Madden, M.

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Void nucleation on intentionally added defects in Al interconnects by Doan, J. C., Lee, S.-H., Bravman, J. C., Flinn, P. A., Marieb, T. N.

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A 90nm high volume manufacturing logic technology featuring Cu metallization and CDO low-k ILD interconnects on 300 mm wafers by Jan, C.H., Anand, N., Allen, C., Bielefeld, J., Buehler, M., Chikamane, V., Fischer, K., Jain, K., Jeong, J., Klopcic, S., Marieb, T., Miner, B., Nguyen, P., Schmitz, A., Nashner, M., Scherban, T., Schroeder, B., Ward, C., Wu, R., Zawadzki, K., Thompson, S., Bohr, M.

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Stress-induced and electromigration voiding in aluminum interconnects passivated with silicon nitride by Lee, Seok-Hee, Bravman, John C., Doan, Jonathan C., Lee, Samantha, Flinn, Paul A., Marieb, Thomas N.

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The evolution of the resistance of aluminum interconnects during electromigration by Doan, Jonathan C., Bravman, John C., Flinn, Paul A., Marieb, Thomas N.

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Observations of electromigration induced void nucleation and growth in polycrystalline and near-bamboo passivated aluminum lines by Marieb, T, Flinn, P, Bravman, J C, Gardner, D, Madden, M

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A High Voltage Scanning Electron Microscope for the In-Situ Observation and Recording of Electromigration Voids in Metal Lines on Integrated Circuits by Flinn, P A, Lee, S, Doan, J C, Bravman, J C, Marieb, T, Madden, C

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90 nm generation, 300 mm wafer low k ILD/Cu interconnect technology by Jan, C.-H., Bielefeld, J., Buehler, M., Chikamane, V., Fischer, K., Hepburn, T., Jain, A., Jeong, J., Kielty, T., Kook, S., Marieb, T., Miner, B., Nguyen, P., Schmitz, A., Nashner, M., Scherban, T., Schroeder, B., Wang, P.-H., Wu, R., Xu, J., Zawadzki, K., Thompson, S., Bohr, M.

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A 65nm logic technology featuring 35nm gate lengths, enhanced channel strain, 8 Cu interconnect layers, low-k ILD and 0.57 /spl mu/m/sup 2/ SRAM cell by Bai, P., Auth, C., Balakrishnan, S., Bost, M., Brain, R., Chikarmane, V., Heussner, R., Hussein, M., Hwang, J., Ingerly, D., James, R., Jeong, J., Kenyon, C., Lee, E., Lee, S.-H., Lindert, N., Liu, M., Ma, Z., Marieb, T., Murthy, A., Nagisetty, R., Natarajan, S., Neirynck, J., Ott, A., Parker, C., Sebastian, J., Shaheed, R., Sivakumar, S., Steigerwald, J., Tyagi, S., Weber, C., Woolery, B., Yeoh, A., Zhang, K., Bohr, M.

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A 65nm logic technology featuring 35nm gate lengths, enhanced channel strain, 8 Cu interconnect layers, low-k ILD and 0.57 μm2 SRAM cell by BAI, P, AUTH, C, JAMES, R, JEONG, J, KENYON, C, LEE, E, LEE, S.-H, LINDERT, N, LIU, M, MA, Z, MARIEB, T, MURTHY, A, BALAKRISHNAN, S, NAGISETTY, R, NATARAJAN, S, NEIRYNCK, J, OTT, A, PARKER, C, SEBASTIAN, J, SHAHEED, R, SIVAKUMAR, S, STEIGERWALD, J, TYAGI, S, BOST, M, WEBER, C, WOOLERY, B, YEOH, A, ZHANG, K, BOHR, M, BRAIN, R, CHIKARMANE, V, HEUSSNER, R, HUSSEIN, M, HWANG, J, INGERLY, D

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Copper interconnection deposition techniques and integration by Gang Bai, Chien Chiang, Cox, N., Sychyi Fang, Gardner, D.S., Mack, A., Marieb, T., Xiao-Chun Mu, Ochoa, V., Villasol, R., Jick Yu

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The relationship between resistance changes and void volume changes in passivated aluminum interconnects by Doan, J.C., Bravman, J.C., Flinn, P.A., Marieb, T.N.

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Deleterious protein‐altering mutations in the SCN10A voltage‐gated sodium channel gene are associated with prolonged QT by Abou Ziki, M.D., Seidelmann, S.B., Smith, E., Atteya, G., Jiang, Y., Fernandes, R.G., Marieb, M.A., Akar, J.G., Mani, A.

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