HfO2 based memory devices with rectifying capabilities by Quinteros, C., Zazpe, R., Marlasca, F. G., Golmar, F., Casanova, F., Stoliar, P., Hueso, L., Levy, P.

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Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol by Ghenzi, N., Sánchez, M. J., Rozenberg, M. J., Stoliar, P., Marlasca, F. G., Rubi, D., Levy, P.

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Resistive switching in Ag–TiO2 contacts by Ghenzi, N., Stoliar, P., Fuertes, M.C., Marlasca, F.G., Levy, P.

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Magnetism and electrode dependant resistive switching in Ca-doped ceramic bismuth ferrite by Rubi, D., Marlasca, F.G., Reinoso, M., Bonville, P., Levy, P.

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Manganite based memristors: Influence of the electroforming polarity on the electrical behavior and radiation hardness by Rubi, D., Kalstein, A., Román, W.S., Ghenzi, N., Quinteros, C., Mangano, E., Granell, P., Golmar, F., Marlasca, F.G., Suarez, S., Bernardi, G., Albornoz, C., Leyva, A.G., Levy, P.

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Resistive switching in AgaTiO2 contacts by Ghenzi, N, Stoliar, P, Fuertes, M C, Marlasca, F G, Levy, P

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Studying ReRAM devices at Low Earth Orbits using the LabOSat platform by Barella, M., Sanca, G., Marlasca, F. Gomez, Acevedo, W. Román, Rubi, D., Inza, M.A. García, Levy, P., Golmar, F.

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LabOSat-01: A Payload for In-Orbit Device Characterization by Sanca, G. A., Barella, M., Gomez Marlasca, F., Alvarez, N., Levy, P., Golmar, F.

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YBCO-based non-volatile ReRAM tested in Low Earth Orbit by Acha, C., Barella, M., Sanca, G. A., Gomez Marlasca, F., Huhtinen, H., Paturi, P., Levy, P., Golmar, F.

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Proton irradiation effects on metal-YBCO interfaces by Acha, C., Sanca, G.A., Barella, M., Alurralde, M., Marlasca, F. Gomez, Huhtinen, H., Paturi, P., Golmar, F., Levy, P.

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Proton irradiation effects on metal-YBCO interfaces by Acha, C, Sanca, GA, Barella, M, Alurralde, M, Marlasca, F Gomez, Huhtinen, H, Paturi, P, Golmar, F, Levy, P

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Nonvolatile Multilevel Resistive Switching Memory Cell: A Transition Metal Oxide-Based Circuit by Stoliar, P., Levy, P., Sanchez, M. J., Leyva, A. G., Albornoz, C. A., Gomez-Marlasca, F., Zanini, A., Toro Salazar, C., Ghenzi, N., Rozenberg, M. J.

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Asymmetric pulsing for reliable operation of titanium/manganite memristors by Gomez-Marlasca, F., Ghenzi, N., Stoliar, P., Sánchez, M. J., Rozenberg, M. J., Leyva, G., Levy, P.

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Modeling electronic transport mechanisms in metal-manganite memristive interfaces by Gomez-Marlasca, F., Ghenzi, N., Leyva, A. G., Albornoz, C., Rubi, D., Stoliar, P., Levy, P.

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Proton irradiation effects on metal-YBCO interfaces by Acha, C, Sanca, G A, Barella, M, Alurralde, M, F Gomez Marlasca, Huhtinen, H, Paturi, P, Golmar, F, Levy, P

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YBCO-based non-volatile ReRAM tested in Low Earth Orbit by Acha, C, Barella, M, Sanca, G A, F Gomez Marlasca, Huhtinen, H, Paturi, P, Levy, P, Golmar, F

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LabOSat as a versatile payload for small satellites: first 100days in LEO orbit by Sanca, G A, Barella, M, F Gomez Marlasca, Rodríguez, G, Martelliti, D, Patrone, L, Levy, P, Golmar, F

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Asymmetric pulsing for reliable operation of titanium/manganite memristors by Gomez-Marlasca, F, Ghenzi, N, Stoliar, P, Sánchez, M J, Rozenberg, M J, Leyva, G, Levy, P

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Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit by Stoliar, P, Levy, P, Sánchez, M J, Leyva, A G, Albornoz, C A, Gomez-Marlasca, F, Zanini, A, C Toro Salazar, Ghenzi, N, Rozenberg, M J

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