40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology by Zhang, Y., Whelan, C.S., Leoni, R., Marsh, P.F., Hoke, W.E., Hunt, J.B., Laighton, C.M., Kazior, T.E.

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Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates by Whelan, C.S., Kazior, T.E., Marsh, P.F., Hoke, W.E., McTaggart, R.A., Lyman, P.S., Lemonias, P.J., Lardizabal, S.M., Leoni, R.E., Lichwala, S.J.

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High indium metamorphic HEMT on a GaAs substrate by Hoke, W.E., Kennedy, T.D., Torabi, A., Whelan, C.S., Marsh, P.F., Leoni, R.E., Xu, C., Hsieh, K.C.

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Properties of metamorphic materials and device structures on GaAs substrates by Hoke, W.E., Kennedy, T.D., Torabi, A., Whelan, C.S., Marsh, P.F., Leoni, R.E., Lardizabal, S.M., Zhang, Y., Jang, J.H., Adesida, I., Xu, C., Hsieh, K.C.

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Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates by Lubyshev, D., Liu, W. K., Stewart, T. R., Cornfeld, A. B., Fang, X. M., Xu, X., Specht, P., Kisielowski, C., Naidenkova, M., Goorsky, M. S., Whelan, C. S., Hoke, W. E., Marsh, P. F., Mirecki Millunchick, J., Svensson, S. P.

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Reliability of metamorphic HEMTs on GaAs substrates by Marsh, P.F, Whelan, C.S, Hoke, W.E, Leoni III, R.E, Kazior, T.E

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Low noise In/sub 0.32/(AlGa)/sub 0.68/As/In/sub 0.43/Ga/sub 0.57/As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density by Whelan, C.S., Hoke, W.F., McTaggart, R.A., Lardizabal, M., Lyman, P.S., Marsh, P.F., Kazior, T.E.

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Low noise In0.32(AlGa)0.68As/In0.43Ga0.57 As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density by Whelan, C.S, Hoke, W.F, McTaggart, R.A, Lardizabal, M, Lyman, P.S, Marsh, P.F, Kazior, T.E

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GaAs metamorphic HEMT (MHEMT): an attractive alternative to InP HEMTs for high performance low noise and power applications by Whelan, C.S., Marsh, P.F., Hoke, W.E., McTaggart, R.A., McCarroll, C.P., Kazior, T.E.

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95 GHz metamorphic HEMT power amplifiers on GaAs by Herrick, K.J., Lardizabal, S.M., Marsh, P.F., Whelan, C.S.

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Low noise metamorphic HEMT devices and amplifiers on GaAs substrates by Marsh, P.F., Chu, S.L.G., Lardizabal, S.M., Leoni, R.E., Kang, S., Wohlert, R., Bowlby, A.M., Hoke, W.E., McTaggart, R.A., Whelan, C.S., Lemonias, P.J., McIntosh, P.M., Kazior, T.E.

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Optimization of MOVPE grown In/sub x/Al/sub 1-x/As/In/sub 0.53/Ga/sub 0.47/As planar heteroepitaxial Schottky diodes for terahertz applications by Kyushik Hong, Marsh, P.F., Geok-Ing Ng, Pavlidis, D., Chang-Hee Hong

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Metamorphic optoelectronic integrated circuits by Leoni, R.E., Whelan, C.S., Marsh, P.F., Zhang, Y., Hunt, J.G., Laighton, C.S., Hoke, W.E., Kazior, T.E.

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A comparison of channel indium content in low noise metamorphic HEMTs with In/sub x/Ga/sub 1-x/As (0.3<X/spl les/0.6) by Whelan, C.S., Lardizabal, S.M., Buhles, P.M., Hoke, W.E., Marsh, P.F., McTaggart, R.A., McCarroll, C.P., Kazior, T.E.

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MBE growth of high quality metamorphic HEMT structures on GaAs by Lubyshev, D., Liu, W.K., Stewart, T., Cornfeld, A.B., Patton, J., Millunchick, J.M., Hoke, W., Marsh, P.F., Meaton, C., Nichols, K., Svensson, S.P.

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Reliability of metamorphic HEMTs on GaAs substrates by Marsh, P.F., Whelan, C.S., Hoke, W.E., Leoni, R.E., Kazior, T.E.

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Reliability of metamorphic HEMTs on GaAs substrates by Marsh, P.F., Whelan, C.S., Hoke, W.E., Leoni, R.E., Kazior, T.E.

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High breakdown voltage InAlGaAs/In/sub 0.32/Ga/sub 0.68/As metamorphic HEMT for microwave and MM-wave power applications by Whelan, C.S., Hoke, W.E., McTaggart, R.A., Lyman, P.S., Marsh, P.F., Leoni, R.E., Lichwala, S.J., Kazior, T.E.

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High power and gain at 35 GHz utilizing an InAlGaAs-In/sub 0.32/Ga/sub 0.68/As metamorphic HEMT by Whelan, C.S., Hoke, W.E., McTaggart, R.A., Lyman, P.S., Marsh, P.F., Lichwala, S.J., Kazior, T.E.

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High indium metamorphic HEMT on a GaAs substrate by Hoke, W.E., Kennedy, T.D., Torabi, A., Whelan, C.S., Marsh, P.F., Leoni, R.E., Xu, C., Hsieh, K.C.

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