Search Results - Martinez-Blanque, C

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  1. 1
    Theoretical interpretation of the electron mobility behavior in InAs nanowires

    Theoretical interpretation of the electron mobility behavior in InAs nanowires by Marin, E. G., Ruiz, F. G., Godoy, A., Tienda-Luna, I. M., Martínez-Blanque, C., Gámiz, F.

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  2. 2
    Effect of confined acoustic phonons on the electron mobility of rectangular nanowires

    Effect of confined acoustic phonons on the electron mobility of rectangular nanowires by Tienda-Luna, I. M., Ruiz, F. G., Godoy, A., Donetti, L., Martínez-Blanque, C., Gámiz, F.

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    Electrostatic performance of InSb, GaSb, Si and Ge p-channel nanowires

    Electrostatic performance of InSb, GaSb, Si and Ge p-channel nanowires by Martinez-Blanque, C, Marin, E G, Toral, A, Gonzalez-Medina, J M, Ruiz, F G, Godoy, A, Gámiz, F

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    Influence of the back-gate bias on the electron mobility of trigate MOSFETs

    Influence of the back-gate bias on the electron mobility of trigate MOSFETs by Ruiz, F. G., Marin, E. G., Tienda-Luna, I. M., Godoy, A., Martinez-Blanque, C., Gamiz, F.

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