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    Quantitative Evaluation of Dopant Loss in 5–10 keV As Ion Implantation for Low-Resistive, Ultrashallow Source/Drain Formation

    Quantitative Evaluation of Dopant Loss in 5–10 keV As Ion Implantation for Low-Resistive, Ultrashallow Source/Drain Formation by Koh, Meishoku, Furumoto, KazuhikoEgusa, Seo, ToruShirakata, Yokoyama, KentaroShibahara, MasatakaHirose, MasatakaHirose

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