A highly manufacturable trench isolation process for deep submicron DRAMs by Fazan, P.C., Mathews, V.K.

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Hot-carrier-induced degradation of gate dielectrics grown in nitrous oxide under accelerated aging by Ditali, A., Mathews, V., Fazan, P.

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Physical and electrical characteristics of thin silicon nitride dielectric films deposited on smooth and rugged polycrystalline silicon after rapid thermal nitridation by MATHEWS, V. K, DITALI, A, FAZAN, P. C

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Residues, polycrystalline silicon voids, and active area damage with the polycrystalline silicon buffered local oxidation of silicon isolation process by Mathews, Viju K., Fazan, Pierre C., Maddox, Roy L.

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Trapping, conduction, and dielectric breakdown in Si3N4 films on As-deposited rugged polysilicon by CHAN, H. C, MATHEWS, V, FAZAN, P. C

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Ultrathin oxide-nitride dielectrics for rugged stacked DRAM capacitors by Fazan, P.C., Mathews, V.K., Chan, H.C., Ditali, A.

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Electrical properties of oxide-nitride dielectric films incorporating passivation oxide on polycrystalline silicon for advanced dynamic random access memory stacked capacitors by CHAN, H. C, MATHEWS, V. K, FAZAN, P. C

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Degradation of junction leakage in devices subjected to gate oxidation in nitrous oxide (MOS transistors) by Mathews, V.K., Maddox, R.L., Fazan, P.C., Rosato, J., Hwang, H., Lee, J.

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Physical and electrical characterization of poly buffered LOCOS isolation process for sub 0.5 mu m ULSI technology by Maddox, R L, Mathews, V K, Fazan, P C

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Furnace N2O oxidation process for submicron MOSFET device applications by HYUNSANG HWANG, MING-YIN HAO, LEE, J, MATHEWS, V, FAZAN, P. C, DENNISON, C

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Furnace N 2O oxidation process for submicron MOSFET device applications by Hwang, Hyunsang, Hao, Ming-yin, Lee, Jack, Mathews, Viju, Fazan, Pierre C., Dennison, Chuck

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